* Fast Access Time 8,10,12ns(Max.)
* Low Power Dissipation Standby (TTL) : 50mA(Max.) (CMOS) : 5mA(Max.) 0.7mA(Max.) - L-Ver. only Operating K6R1008V1B-8 : 160mA(Max.) K6R1008V1B-10 : 155mA(Max.) K6R1008V1B-12 : 150mA(Max.)
* Single 3.3±0.3V Power Supply
* TTL Compati
K6R1008V1B-P Datasheet (153.80 KB)
K6R1008V1B-P
Samsung semiconductor
153.80 KB
128kx8 bit high speed static ram.
K6R1008V1B-C/B-L, K6R1008V1B-I/B-P Document Title Preliminary PRELIMINARY CMOS SRAM 128Kx8 Bit High Speed Static RAM(3.3V Operating), Revolutionary .
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