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K6R4008V1B-I - 512K x8 Bit High Speed Static RAM

This page provides the datasheet information for the K6R4008V1B-I, a member of the K6R4008V1B 512K x8 Bit High Speed Static RAM family.

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Datasheet Details

Part number K6R4008V1B-I
Manufacturer Samsung semiconductor
File Size 182.98 KB
Description 512K x8 Bit High Speed Static RAM
Datasheet download datasheet K6R4008V1B-I Datasheet
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www.DataSheet4U.com K6R4008V1B-C/B-L, K6R4008V1B-I/B-P PRELIMINARY CMOS SRAM Document Title 512Kx8 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges. Revision History RevNo. History Rev. 0.0 Initial release with Design Target. Draft Data Jan. 1st, 1997 Rev. 1.0 Release to Preliminary Data Sheet. 1.1. Replace Design Target to Preliminary. Jun. 1st, 1997 Rev. 2.0 Release to Final Data Sheet. 2.1. Delete Preliminary. 2.2. Add 30pF capacitive in test load. 2.3. Relax DC characteristics. Item Previous ICC 10ns 170mA 12ns 160mA 15ns 150mA ISB f=max. 40mA ISB1 f=0 10 / 1mA IDR VDR=3.0V 0.9mA Current 205mA 200mA 195mA 50mA 10 / 1.2mA 1.0mA Feb.11th.1998 Rev. 2.1 Change operating current at Industrial Temperature range.
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