K6R4008V1B-P
K6R4008V1B-P is 512K x8 Bit High Speed Static RAM manufactured by Samsung Semiconductor.
- Part of the K6R4008V1B comparator family.
- Part of the K6R4008V1B comparator family.
..
K6R4008V1B-C/B-L, K6R4008V1B-I/B-P
PRELIMINARY CMOS SRAM
Document Title
512Kx8 Bit High Speed Static RAM(3.3V Operating). Operated at mercial and Industrial Temperature Ranges.
Revision History
RevNo. History Rev. 0.0 Initial release with Design Target.
Draft Data Jan. 1st, 1997
Rev. 1.0
Release to Preliminary Data Sheet. 1.1. Replace Design Target to Preliminary.
Jun. 1st, 1997
Rev. 2.0
Release to Final Data Sheet.
2.1. Delete Preliminary.
2.2. Add 30pF capacitive in test load.
2.3. Relax DC characteristics.
Item Previous
10ns
170mA
12ns
160mA
15ns
150mA
ISB f=max. 40mA
ISB1 f=0 10 / 1mA
VDR=3.0V
0.9mA
Current 205mA 200mA 195mA 50mA...
