K6T8008C2M Key Features
- Process Technology: TFT
- Organization: 1M x8
- Power Supply Voltage: 4.5~5.5V
- Low Data Retention Voltage: 2.0V(Min)
- Three state output and TTL patible
- Package Type: 44-TSOP2-400F/R
- Part: K6T8008C2M
- Manufacturer: Samsung Semiconductor
- Size: 143.59 KB
Related Samsung Semiconductor Datasheets
| Part Number | Description |
|---|---|
| K6T8016C3M | 512Kx16 bit Low Power CMOS Static RAM |
| K6T0808C1D | CMOS SRAM |
| K6T0808U1D | CMOS SRAM |
| K6T0808V1D | CMOS SRAM |
| K6T1008C2C | CMOS SRAM |
K6T8008C2M Description
The K6T8008C2M families are fabricated by SAMSUNG′s advanced CMOS process technology. The families support industrial operating temperature ranges for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current.