Datasheet Details
| Part number | K6T8008C2M |
|---|---|
| Manufacturer | Samsung Semiconductor |
| File Size | 143.59 KB |
| Description | 1Mx8 bit Low Power and Low Voltage CMOS Static RAM |
| Datasheet | K6T8008C2M_Samsungsemiconductor.pdf |
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Overview: K6T8008C2M Family Document Title 1Mx8 bit Low Power and Low Voltage CMOS Static RAM CMOS SRAM Revision History Revision No. History 0.0 1.0 Initial draft Finalize - Adopt New Code system. - Improve VIN, VOUT max. on A ’ BSOLUTE MAXIMUM RATINGS’from 7.0V to VCC+0.5V. - Change Icc: from 12 to 10mA - Change Icc1: from 10 to 12mA Draft Date June 22, 1999 February 29, 2000 Remark Advance Final .. The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to yourquestions about device. If you have any questions, please contact the SAMSUNG branch offices. 1 Revision 1.
| Part number | K6T8008C2M |
|---|---|
| Manufacturer | Samsung Semiconductor |
| File Size | 143.59 KB |
| Description | 1Mx8 bit Low Power and Low Voltage CMOS Static RAM |
| Datasheet | K6T8008C2M_Samsungsemiconductor.pdf |
|
|
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The K6T8008C2M families are fabricated by SAMSUNG′s advanced CMOS process technology.
The families support industrial operating temperature ranges for user flexibility of system design.
The families also support low data retention voltage for battery back-up operation with low data retention current.
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