K6T0808C1D Description
Replace test load 100pF to 50pF for 55ns part CMOS SRAM Draft Data May 18, 1997 April 1, 1997 Remark Design target Preliminily November 11, 1997 Final The attached datasheets are provided by SAMSUNG Electroni.
K6T0808C1D is CMOS SRAM manufactured by Samsung Semiconductor.
| Part Number | Description |
|---|---|
| K6T0808U1D | CMOS SRAM |
| K6T0808V1D | CMOS SRAM |
| K6T1008C2C | CMOS SRAM |
| K6T1008C2E | CMOS SRAM |
| K6T1008U2C | 128K x8 bit Low Power and Low Voltage CMOS Static RAM |
Replace test load 100pF to 50pF for 55ns part CMOS SRAM Draft Data May 18, 1997 April 1, 1997 Remark Design target Preliminily November 11, 1997 Final The attached datasheets are provided by SAMSUNG Electroni.