K6X4016T3F - 256Kx16 bit Low Power and Low Voltage CMOS Static RAM

Datasheet Summary

Description

The K6X4016T3F families are fabricated by SAMSUNG′s advanced CMOS process technology.

The families support various operating temperature range and have 44-TSOP2 package type for user flexibility of system design.

Features

Process Technology: Full CMOS.
Organization: 256K x16.
Power Supply Voltage: 2.7~3.6V.
Low Data Retention Voltage: 2V(Min).
Three State Outputs.
Package Type: 44-TSOP2-400F CMOS SRAM.

Samsung semiconductor

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Datasheet Details

Part number	K6X4016T3F
Manufacturer	Samsung semiconductor
File Size	138.28 KB
Description	256Kx16 bit Low Power and Low Voltage CMOS Static RAM
Datasheet	K6X4016T3F Datasheet
Additional preview pages of the K6X4016T3F datasheet.

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Full PDF Text Transcription

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K6X4016T3F Family Document Title 256Kx16 bit Low Power and Low Voltage CMOS Static RAM CMOS SRAM Revision History Revision No 0.0 0.1 History Initial draft Revised - Added Commercial product - Deleted 44-TSOP2-400R Package Type. - Added 55ns product(@ 3.0V~3.

Published: Apr 7, 2005 |