K6X8008C2B Datasheet

Manufacturer: Samsung Semiconductor

Datasheet Details

Part number	K6X8008C2B
Datasheet	K6X8008C2B_Samsungsemiconductor.pdf
File Size	131.20 KB
Manufacturer	Samsung Semiconductor
Description	1Mx8 bit Low Power and Low Voltage CMOS Static RAM

K6X8008C2B Overview

The K6X8008C2B families are fabricated by SAMSUNG′s advanced full CMOS process technology. The families support various operating temperature range for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current.

K6X8008C2B Key Features

Process Technology: Full CMOS
Organization: 1M x8
Power Supply Voltage: 4.5~5.5V
Low Data Retention Voltage: 2.0V(Min)
Three state output and TTL patible
Package Type: 44-TSOP2-400F

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K6X8008T2B	CMOS SRAM
K6X8016C3B	512Kx16 bit Low Power Full CMOS Static RAM
K6X8016T3B	512Kx16 bit Low Power Full CMOS Static RAM
K6X0808C1D	32Kx8 bit Low Power CMOS Static RAM
K6X0808T1D	32Kx8 bit Low Power CMOS Static RAM
K6X1008C2D	128Kx8 bit Low Power CMOS Static RAM
K6X1008T2D	128Kx8 bit Low Power CMOS Static RAM
K6X4008C1F	512Kx8 bit Low Power full CMOS Static RAM
K6X4008T1F	512K x 8 bit Low Power and Low Voltage CMOS Static RAM
K6X4016C3F	256Kx16 bit Low Power full CMOS Static RAM

Datasheet Details

K6X8008C2B Overview

K6X8008C2B Key Features

More Datasheets from Samsung Semiconductor

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