K6X8008C2B - 1Mx8 bit Low Power and Low Voltage CMOS Static RAM

Datasheet Summary

Description

The K6X8008C2B families are fabricated by SAMSUNG′s advanced full CMOS process technology.

The families support various operating temperature range for user flexibility of system design.

Features

Process Technology: Full CMOS.
Organization: 1M x8.
Power Supply Voltage: 4.5~5.5V.
Low Data Retention Voltage: 2.0V(Min).
Three state output and TTL Compatible.
Package Type: 44-TSOP2-400F CMOS SRAM.

Samsung semiconductor

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Datasheet Details

Part number	K6X8008C2B
Manufacturer	Samsung semiconductor
File Size	131.20 KB
Description	1Mx8 bit Low Power and Low Voltage CMOS Static RAM
Datasheet	K6X8008C2B Datasheet
Additional preview pages of the K6X8008C2B datasheet.

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K6X8008C2B Family Document Title 1Mx8 bit Low Power and Low Voltage CMOS Static RAM CMOS SRAM Revision History Revision No. History 0.0 0.1 Initial draft Revised - Deleted 44-TSOP2-400R package type. - Added Commercial product. Finalized - Changed ICC from 10mA to 6mA - Changed ICC1 from 10mA to 7mA - Changed ICC2 from 50mA to 35mA - Changed ISB from 3mA to 0.4mA - Changed ISB1(Commercial) from 40µA to 25µA - Changed ISB1(industrial) from 40µA to 25µA - Changed ISB1(Automotive) from 50µA to 40µA - Changed IDR(Commercial) from 30µA to 15µA - Changed IDR(industrial) from 30µA to 15µA - Changed IDR(Automotive) from 40µA to 30µA Draft Date October 31, 2002 December 11, 2002 Remark Preliminary Preliminary 1.

Published: Apr 7, 2005 |