K6X8016T3B - 512Kx16 bit Low Power Full CMOS Static RAM

Description

The K6X8016T3B families are fabricated by SAMSUNG′s advanced full CMOS process technology.

The families support various operating temperature range for user flexibility of system design.

Features

Process Technology: Full CMOS.
Organization: 512K x16.
Power Supply Voltage: 2.7~3.6V.
Low Data Retention Voltage: 1.5V(Min).
Three state outputs.
Package Type: 44-TSOP2-400F.

Samsung semiconductor

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Datasheet Details

Part number	K6X8016T3B
Manufacturer	Samsung semiconductor
File Size	159.46 KB
Description	512Kx16 bit Low Power Full CMOS Static RAM
Datasheet	K6X8016T3B Datasheet
Additional preview pages of the K6X8016T3B datasheet.

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K6X8016T3B Family CMOS SRAM 512Kx16 bit Low Power Full CMOS Static RAM FEATURES • Process Technology: Full CMOS • Organization: 512K x16 • Power Supply Voltage: 2.7~3.6V • Low Data Retention Voltage: 1.5V(Min) • Three state outputs • Package Type: 44-TSOP2-400F GENERAL DESCRIPTION The K6X8016T3B families are fabricated by SAMSUNG′s advanced full CMOS process technology. The families support various operating temperature range for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current. PRODUCT FAMILY Product Family Operating Temperature Vcc Range Speed K6X8016T3B-F K6X8016T3B-Q Industrial(-40~85°C) Automotive(-40~125°C) 2.7~3.6V 1. This parameter is measured with 50pF test load (Vcc=3.

Published: Apr 7, 2005 |