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K6X8016T3B - 512Kx16 bit Low Power Full CMOS Static RAM

General Description

The K6X8016T3B families are fabricated by SAMSUNG′s advanced full CMOS process technology.

The families support various operating temperature range for user flexibility of system design.

Key Features

  • Process Technology: Full CMOS.
  • Organization: 512K x16.
  • Power Supply Voltage: 2.7~3.6V.
  • Low Data Retention Voltage: 1.5V(Min).
  • Three state outputs.
  • Package Type: 44-TSOP2-400F.

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Full PDF Text Transcription for K6X8016T3B (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for K6X8016T3B. For precise diagrams, and layout, please refer to the original PDF.

K6X8016T3B Family CMOS SRAM 512Kx16 bit Low Power Full CMOS Static RAM FEATURES • Process Technology: Full CMOS • Organization: 512K x16 • Power Supply Voltage: 2.7~3.6V ...

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: Full CMOS • Organization: 512K x16 • Power Supply Voltage: 2.7~3.6V • Low Data Retention Voltage: 1.5V(Min) • Three state outputs • Package Type: 44-TSOP2-400F GENERAL DESCRIPTION The K6X8016T3B families are fabricated by SAMSUNG′s advanced full CMOS process technology. The families support various operating temperature range for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current. PRODUCT FAMILY Product Family Operating Temperature Vcc Range Speed K6X8016T3B-F K6X8016T3B-Q Industrial(-40~85°C) Automotive(-40~125°C) 2.7~3.6V

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