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K6X8016T3B

K6X8016T3B is 512Kx16 bit Low Power Full CMOS Static RAM manufactured by Samsung Semiconductor.
K6X8016T3B datasheet preview

K6X8016T3B Datasheet

Part number K6X8016T3B
Download K6X8016T3B Datasheet (PDF)
File Size 159.46 KB
Manufacturer Samsung Semiconductor
Description 512Kx16 bit Low Power Full CMOS Static RAM
K6X8016T3B page 2 K6X8016T3B page 3

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K6X8016T3B Distributor

K6X8016T3B Description

The K6X8016T3B families are fabricated by SAMSUNG′s advanced full CMOS process technology. The families support various operating temperature range for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current.

K6X8016T3B Key Features

  • Process Technology: Full CMOS
  • Organization: 512K x16
  • Power Supply Voltage: 2.7~3.6V
  • Low Data Retention Voltage: 1.5V(Min)
  • Three state outputs
  • Package Type: 44-TSOP2-400F

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