K6X8016T3B ram equivalent, 512kx16 bit low power full cmos static ram.
* Process Technology: Full CMOS
* Organization: 512K x16
* Power Supply Voltage: 2.7~3.6V
* Low Data Retention Voltage: 1.5V(Min)
* Three state output.
The K6X8016T3B families are fabricated by SAMSUNG′s advanced full CMOS process technology. The families support various operating temperature range for user flexibility of system design. The families also support low data retention voltage for batter.
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