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K7A801801M - 256Kx36 & 512Kx18 Synchronous SRAM

This page provides the datasheet information for the K7A801801M, a member of the K7A803601M 256Kx36 & 512Kx18 Synchronous SRAM family.

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Datasheet Details

Part number K7A801801M
Manufacturer Samsung semiconductor
File Size 462.46 KB
Description 256Kx36 & 512Kx18 Synchronous SRAM
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K7A803601M K7A801801M 256Kx36 & 512Kx18 Synchronous SRAM Document Title 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM Revision History Rev. No. History 0.0 Initial draft 0.1 Modify DC characteristics( Input Leakage Current test Conditions) form VDD=VSS to VDD to Max. 0.2 Remove 119BGA Package Type. 0.3 Change DC Characteristics. ISB value from 65mA to 110mA at -72 ISB value from 60mA to 110mA at -85 ISB value from 50mA to 100mA at -10 ISB1 value from 10mA to 30mA ISB2 value from 10mA to 30mA 0.4 1. Changed tCD from 4.0ns to 4.2ns at -85. Changed tOE from 4.0ns to 4.2ns at -85. 2.
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