K7A801801M Description
History 0.0 Initial draft 0.1 Modify DC characteristics( Input Leakage Current test Conditions) form VDD=VSS to VDD to Max. 0.2 Remove 119BGA Package Type. 0.3 Change DC Characteristics.
- Part: K7A801801M
- Manufacturer: Samsung Semiconductor
- Size: 462.46 KB
Related Samsung Semiconductor Datasheets
| Part Number | Description |
|---|---|
| K7A801800B | 256K x 36 & 512K x 18 Synchronous SRAM |
| K7A801809A | 256Kx36 & 512Kx18 Synchronous SRAM |
| K7A801809B | 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM |
| K7A803600B | 256K x 36 & 512K x 18 Synchronous SRAM |
| K7A803601M | 256Kx36 & 512Kx18 Synchronous SRAM |