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K7A801809A Datasheet

Manufacturer: Samsung Semiconductor
K7A801809A datasheet preview

Datasheet Details

Part number K7A801809A
Datasheet K7A801809A_Samsungsemiconductor.pdf
File Size 395.05 KB
Manufacturer Samsung Semiconductor
Description 256Kx36 & 512Kx18 Synchronous SRAM
K7A801809A page 2 K7A801809A page 3

K7A801809A Overview

The K7A803609A and K7A801809A are 9,437,184-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System. It is organized as 256K(512K) words of 36(18) bits and integrates address and control registers, a 2-bit burst address counter and added some new functions for high performance cache RAM applications; Write cycles are internally self-timed and...

K7A801809A Key Features

  • Synchronous Operation
  • 2 Stage Pipelined operation with 4 Burst
  • On-Chip Address Counter
  • Self-Timed Write Cycle
  • On-Chip Address and Control Registers
  • 3.3V+0.165V/-0.165V Power Supply
  • 5V Tolerant Inputs Except I/O Pins
  • Byte Writable Function
  • Global Write Enable Controls a full bus-width write
  • Power Down State via ZZ Signal
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K7A803601M 256Kx36 & 512Kx18 Synchronous SRAM
K7A803609A 256Kx36 & 512Kx18 Synchronous SRAM
K7A803609B 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM
K7A161800A 512K x 36 / x32 & 1M x 18 Synchronous SRAM
K7A161801A 512K x 36 / 32 & 1M x 18 Synchronous SRAM
K7A161831B 18MB B-DIE SYNC SRAM SPECIFICATION 100TQFP WITH PB / PB-FREE

K7A801809A Distributor

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