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K7A801801M - 256Kx36 & 512Kx18 Synchronous SRAM

Download the K7A801801M datasheet PDF. This datasheet also covers the K7A803601M variant, as both devices belong to the same 256kx36 & 512kx18 synchronous sram family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (K7A803601M-Samsungsemiconductor.pdf) that lists specifications for multiple related part numbers.

Other Datasheets by Samsung Semiconductor

Part Number Description
K7A801800B 256K x 36 & 512K x 18 Synchronous SRAM
K7A801809A 256Kx36 & 512Kx18 Synchronous SRAM
K7A801809B 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM
K7A803600B 256K x 36 & 512K x 18 Synchronous SRAM
K7A803601M 256Kx36 & 512Kx18 Synchronous SRAM
K7A803609A 256Kx36 & 512Kx18 Synchronous SRAM
K7A803609B 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM
K7A161800A 512K x 36 / x32 & 1M x 18 Synchronous SRAM
K7A161801A 512K x 36 / 32 & 1M x 18 Synchronous SRAM
K7A161831B 18MB B-DIE SYNC SRAM SPECIFICATION 100TQFP WITH PB / PB-FREE

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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K7A803601M K7A801801M 256Kx36 & 512Kx18 Synchronous SRAM Document Title 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM Revision History Rev. No. History 0.0 Initial draft 0.1 Modify DC characteristics( Input Leakage Current test Conditions) form VDD=VSS to VDD to Max. 0.2 Remove 119BGA Package Type. 0.3 Change DC Characteristics. ISB value from 65mA to 110mA at -72 ISB value from 60mA to 110mA at -85 ISB value from 50mA to 100mA at -10 ISB1 value from 10mA to 30mA ISB2 value from 10mA to 30mA 0.4 1. Changed tCD from 4.0ns to 4.2ns at -85. Changed tOE from 4.0ns to 4.2ns at -85. 2.