K7M161825M - (K7M161825M / K7M163625M) 512Kx36 & 1Mx18 Flow-Through NtRAM

Samsung semiconductor

Datasheet Details

Part number	K7M161825M
Manufacturer	Samsung semiconductor
File Size	297.18 KB
Description	(K7M161825M / K7M163625M) 512Kx36 & 1Mx18 Flow-Through NtRAM
Datasheet	K7M161825M_Samsungsemiconductor.pdf

The K7M163625M and K7M161825M are 18,874,368-bits Synchronous Static SRAMs.

3.3V+0.165V/-0.165V Power Supply.
I/O Supply Voltage 3.3V+0.165V/-0.165V for 3.3V I/O or 2.5V+0.4V/-0.125V for 2.5V I/O.
Byte Writable Function.
Enable clock and suspend operation.
Single READ/WRITE control pin.
Self-Timed Write Cycle.
Three Chip Enable for simple depth expansion with no data contention.
A interleaved burst or a linear burst mode.
Asynchronous output enable control.
Power Down mod.

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Published: Apr 30, 2006 |