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K7S3218T4C Datasheet

(k7s3236t4c / K7s3218t4c) 1mx36 & 2mx18 Qdrtm Ii B4 Sram

Manufacturer: Samsung Semiconductor

K7S3218T4C Overview

NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND. For updates or additional information about Samsung products, contact your nearest Samsung office.

K7S3218T4C Key Features

  • 1.8V+0.1V/-0.1V Power Supply
  • DLL circuitry for wide output data valid window and future frequency scaling
  • I/O Supply Voltage 1.5V+0.1V/-0.1V
  • Separate independent read and write data ports with concurrent read and write operation
  • HSTL I/O
  • Full data coherency, providing most current data
  • Synchronous pipeline read with self timed late write
  • Read latency: 2 clock cycles
  • Registered address, control and data input/output
  • DDR(Double Data Rate) Interface on read and write ports

K7S3218T4C Applications

  • Samsung Electronics reserves the right to change products or specification without notice

K7S3218T4C Distributor