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K9F6408U0M-TCB0 Datasheet - Samsung semiconductor

8M x 8 Bit NAND Flash Memory

K9F6408U0M-TCB0 Features

* Voltage Supply : 2.7V ~ 3.6V

* Organization - Memory Cell Array : (8M + 256K)bit x 8bit - Data Register : (512 + 16)bit x8bit

* Automatic Program and Erase - Page Program : (512 + 16)Byte - Block Erase : (8K + 256)Byte

* 528-Byte Page Read Operation - Random Access

K9F6408U0M-TCB0 General Description

The K9F6408U0M is a 8M(8,388,608)x8bit NAND Flash Memory with a spare 256K(262,144)x8bit. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation programs the 528-byte page in typically 200 µs and an erase operation can be performed in typ.

K9F6408U0M-TCB0 Datasheet (480.51 KB)

Preview of K9F6408U0M-TCB0 PDF

Datasheet Details

Part number:

K9F6408U0M-TCB0

Manufacturer:

Samsung semiconductor

File Size:

480.51 KB

Description:

8m x 8 bit nand flash memory.
K9F6408U0M-TCB0, K9F6408U0M-TIB0 Document Title 8M x 8 Bit NAND Flash Memory FLASH MEMORY Revision History Revision No. History 0.0 1.0 1.1 Initial .

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TAGS

K9F6408U0M-TCB0 Bit NAND Flash Memory Samsung semiconductor

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