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K9F6408U0M-TIB0 Datasheet, Samsung semiconductor

K9F6408U0M-TIB0 Datasheet, Samsung semiconductor

K9F6408U0M-TIB0

datasheet Download (Size : 480.51KB)

K9F6408U0M-TIB0 Datasheet

K9F6408U0M-TIB0 memory

8m x 8 bit nand flash memory.

K9F6408U0M-TIB0

datasheet Download (Size : 480.51KB)

K9F6408U0M-TIB0 Datasheet

K9F6408U0M-TIB0 Features and benefits

K9F6408U0M-TIB0 Features and benefits


* Voltage Supply : 2.7V ~ 3.6V
* Organization - Memory Cell Array : (8M + 256K)bit x 8bit - Data Register : (512 + 16)bit x8bit
* Automatic Program and Erase .

K9F6408U0M-TIB0 Application

K9F6408U0M-TIB0 Application

and also the spare 16 bytes of a page combined with the other 512 bytes can be utilized by systemlevel ECC. The K9F6408U.

K9F6408U0M-TIB0 Description

K9F6408U0M-TIB0 Description

The K9F6408U0M is a 8M(8,388,608)x8bit NAND Flash Memory with a spare 256K(262,144)x8bit. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation programs the 528-byte page in typically 200.

Image gallery

K9F6408U0M-TIB0 Page 1 K9F6408U0M-TIB0 Page 2 K9F6408U0M-TIB0 Page 3

TAGS

K9F6408U0M-TIB0
Bit
NAND
Flash
Memory
Samsung semiconductor

Manufacturer


Samsung semiconductor

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