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K9K2G08Q0M-PIB0 Datasheet - Samsung semiconductor

256M x 8 Bit / 128M x 16 Bit NAND Flash Memory

K9K2G08Q0M-PIB0 Features

* Voltage Supply -1.8V device(K9K2GXXQ0M): 1.70V~1.95V -3.3V device(K9K2GXXU0M): 2.7 V ~3.6 V

* Organization - Memory Cell Array -X8 device(K9K2G08X0M) : (256M + 8,192K)bit x 8bit -X16 device(K9K2G16X0M) : (128M + 4,096K)bit x 16bit - Data Register -X8 device(K9K2G08X0M): (2K + 64)bi

K9K2G08Q0M-PIB0 General Description

Offered in 256Mx8bit or 128Mx16bit, the K9K2GXXX0M is 2G bit with spare 64M bit capacity. Its NAND cell provides the most costeffective solution for the solid state mass storage market. A program operation can be performed in typical 300µs on the 2112byte(X8 device) or 1056-word(X16 device) page and.

K9K2G08Q0M-PIB0 Datasheet (734.52 KB)

Preview of K9K2G08Q0M-PIB0 PDF

Datasheet Details

Part number:

K9K2G08Q0M-PIB0

Manufacturer:

Samsung semiconductor

File Size:

734.52 KB

Description:

256m x 8 bit / 128m x 16 bit nand flash memory.
K9K2G08U0M-VCB0,VIB0,FCB0,FIB0 K9K2G08Q0M-YCB0,YIB0,PCB0,PIB0 K9K2G08U0M-YCB0,YIB0,PCB0,PIB0 K9K2G16Q0M-YCB0,YIB0,PCB0,PIB0 K9K2G16U0M-YCB0,YIB0,PCB0.

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TAGS

K9K2G08Q0M-PIB0 256M Bit 128M Bit NAND Flash Memory Samsung semiconductor

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