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K9K2G08Q0M-Y Datasheet, Samsung semiconductor

K9K2G08Q0M-Y Datasheet, Samsung semiconductor

K9K2G08Q0M-Y

datasheet Download (Size : 734.52KB)

K9K2G08Q0M-Y Datasheet

K9K2G08Q0M-Y memory equivalent, 256m x 8 bit / 128m x 16 bit nand flash memory.

K9K2G08Q0M-Y

datasheet Download (Size : 734.52KB)

K9K2G08Q0M-Y Datasheet

Features and benefits


* Voltage Supply -1.8V device(K9K2GXXQ0M): 1.70V~1.95V -3.3V device(K9K2GXXU0M): 2.7 V ~3.6 V
* Organization - Memory Cell Array -X8 device(K9K2G08X0M) : (256M + .

Application

such as solid state file storage and other portable applications requiring non-volatility. 3 K9K2G08U0M-VCB0,VIB0,FCB0.

Description

Offered in 256Mx8bit or 128Mx16bit, the K9K2GXXX0M is 2G bit with spare 64M bit capacity. Its NAND cell provides the most costeffective solution for the solid state mass storage market. A program operation can be performed in typical 300µs on the 211.

Image gallery

K9K2G08Q0M-Y Page 1 K9K2G08Q0M-Y Page 2 K9K2G08Q0M-Y Page 3

TAGS

K9K2G08Q0M-Y
256M
Bit
128M
Bit
NAND
Flash
Memory
Samsung semiconductor

Manufacturer


Samsung semiconductor

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