KM23C4100DT Datasheet - Samsung semiconductor

4M-Bit (512Kx8 /256Kx16) CMOS MASK ROM

KM23C4100DT Features

* Switchable organization 524,288 x 8(byte mode) 262,144 x 16(word mode)

* Fast access time : 80ns(Max.)

* Supply voltage : single +5V

* Current consumption Operating : 50mA(Max.) Standby : 50µA(Max.)

* Fully static operation

* All inputs and outputs T

KM23C4100DT General Description

The KM23C4100D(E)T is a fully static mask programmable ROM fabricated using silicon gate CMOS process technology, and is organized either as 524,288 x 8 bit(byte mode) or as 262,144 x 16 bit(word mode) depending on BHE voltage level.(See mode selection table) This device operates with a 5V single po.

KM23C4100DT Datasheet (72.45 KB)

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KM23C4100DT

Manufacturer:

Samsung semiconductor

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72.45 KB

Description:

4m-bit (512kx8 /256kx16) cmos mask rom.

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KM23C4100DT 4M-Bit 512Kx8 256Kx16 CMOS MASK ROM Samsung semiconductor

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KM23C4100DT Features

KM23C4100DT General Description

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