Hynix Semiconductor
HY29F400BT45 - 4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory
HY29F400
4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory
KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirement
(10 views)
Hynix Semiconductor
HY29F400TT90 - 4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory
HY29F400
4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory
KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirement
(10 views)
White Electronic Designs Corporation
EDI8F8512C - 512Kx8 STATIC RAM CMOS
White Electronic Designs
512Kx8 STATIC RAM CMOS, MODULE
FEATURES
512Kx8 bit CMOS Static Random Access Memory • Access Times 20 through 100ns • Dat
(10 views)
Samsung semiconductor
KM23C4100DET - 4M-Bit (512Kx8 /256Kx16) CMOS MASK ROM
KM23C4100D(E)T
4M-Bit (512Kx8 /256Kx16) CMOS MASK ROM
FEATURES
• Switchable organization 524,288 x 8(byte mode) 262,144 x 16(word mode) • Fast access
(9 views)
ETC
EDI88512CA - 512Kx8 Monolithic SRAM/ SMD 5962-95600
EDI88512CA
512Kx8 Monolithic SRAM, SMD 5962-95600
FEATURES
■ Access Times of 15, 17, 20, 25, 35, 45, 55ns ■ Data Retention Function (LPA version) ■ T
(9 views)
Hynix Semiconductor
HY29F400BR45 - 4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory
HY29F400
4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory
KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirement
(8 views)
ICSI
IC62LV5128L - 512Kx8 bit Low Voltage and Ultra Low Power CMOS Static RAM
www.DataSheet4U.com
IC62LV5128L IC62LV5128LL
Document Title
512Kx8 bit Low Voltage and Ultra Low Power CMOS Static RAM
Revision History
Revision No
(8 views)
Samsung semiconductor
K6R4008V1C - 512Kx8 Bit High Speed Static
www.DataSheet4U.com
PRELIMINARY CMOS SRAM
K6R4008V1C-C/C-L, K6R4008V1C-I/C-P
3Document Title
512Kx8 Bit High Speed Static RAM(3.3V Operating). Opera
(8 views)
Samsung semiconductor
KM23C4000DTY - 4M-Bit (512Kx8) CMOS MASK ROM
KM23C4000D(E)TY
4M-Bit (512Kx8) CMOS MASK ROM
FEATURES
• 524,288 x 8 bit organization • Access time : 80ns(Max.) • Supply voltage : single +5V • Curre
(8 views)
Samsung semiconductor
KM23C4000DG - 4M-Bit (512Kx8) CMOS MASK ROM
KM23C4000D(G)
4M-Bit (512Kx8) CMOS MASK ROM
FEATURES
• 524,288x8 bit organization • Access time : 80ns(Max.) • Supply voltage : single +5V • Current c
(8 views)
Cypress Semiconductor
CYM1464 - 512Kx8 Static RAM Module
64
CYM1464
512Kx8 Static RAM Module
Features
• High-density 4-megabit SRAM module • High-speed CMOS SRAMs — Access time of 20 ns • Low active power
(7 views)
Macronix International
MX29F040 - 4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY
MX29F040
4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY
FEATURES
• 524,288 x 8 only • Single power supply operation - 5.0V only operation for read, er
(7 views)
ETC
WS512K8 - 512Kx8 SRAM MODULE
WS512K8-XCX
HI-RELIABILITY PRODUCT
512Kx8 SRAM MODULE, SMD 5962-92078
FIG. 1
PIN CONFIGURATION TOP VIEW
A18 A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0
(7 views)
Macronix International
MX26LV400 - 4M-BIT [512Kx8/256Kx16] CMOS SINGLE VOLTAGE 3V ONLY BOOT SECTOR HIGH SPEED eLiteFlashTM MEMORY
MX26LV400
Macronix NBit TM Memory Family 4M-BIT [512Kx8/256Kx16] CMOS SINGLE VOLTAGE 3V ONLY BOOT SECTOR HIGH SPEED eLiteFlashTM MEMORY
FEATURES
• Ext
(7 views)
Elite Semiconductor
F25L004A - 4Mbit (512Kx8) 3V Only Serial Flash Memory
www.DataSheet4U.com
ESMT
F25L004A 4Mbit (512Kx8)
3V Only Serial Flash Memory
FEATURES
Single supply voltage 2.7~3.6V Speed - Read max frequency
(7 views)
Hynix Semiconductor
HY62U8400A - 512Kx8bit CMOS SRAM
HY62U8400A Series
512Kx8bit CMOS SRAM
Document Title
512K x8 bit 3.0V Low Power CMOS slow SRAM
Revision History
Revision No 04 History Revision Hist
(7 views)
Samsung semiconductor
KM23C4000DETY - 4M-Bit (512Kx8) CMOS MASK ROM
KM23C4000D(E)TY
4M-Bit (512Kx8) CMOS MASK ROM
FEATURES
• 524,288 x 8 bit organization • Access time : 80ns(Max.) • Supply voltage : single +5V • Curre
(7 views)
Samsung semiconductor
KM23C4000D - 4M-Bit (512Kx8) CMOS MASK ROM
KM23C4000D(G)
4M-Bit (512Kx8) CMOS MASK ROM
FEATURES
• 524,288x8 bit organization • Access time : 80ns(Max.) • Supply voltage : single +5V • Current c
(7 views)
Microsemi
EDI88512CA - 512Kx8 Monolithic SRAM
EDI88512CA
512Kx8 Monolithic SRAM, SMD 5962-95600
FEATURES
Access Times of 15, 17, 20, 25, 35, 45, 55ns Data Retention Function (LPA version)
(7 views)
Microsemi
EDI88512CA-XMXG - 512Kx8 Plastic Monolithic SRAM CMOS
EDI88512CA-XMXG WPS512K8X-XRJXG
512Kx8 Plastic Monolithic SRAM CMOS
FEATURES
512Kx8 bit CMOS Static Random Access Memory
• Access Times of 17,
(7 views)