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HY29F400BT55 - 4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory

Datasheet Summary

Description

The HY29F400 is a 4 Megabit, 5 volt only CMOS Flash memory organized as 524,288 (512K) bytes or 262,144 (256K) words.

The device is offered in industry-standard 44-pin PSOP and 48-pin TSOP packages.

The HY29F400 can be programmed and erased in-system with a single 5-volt VCC supply.

Features

  • n 5 Volt Read, Program, and Erase.
  • Minimizes system-level power requirements n High Performance.
  • Access times as fast as 45 ns n Low Power Consumption.
  • 20 mA typical active read current in byte mode, 28 mA typical in word mode.
  • 30 mA typical program/erase current.
  • 5 µA maximum CMOS standby current n Compatible with JEDEC Standards.
  • Package, pinout and command-set compatible with the single-supply Flash device standard.
  • Provides super.

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Datasheet Details

Part number HY29F400BT55
Manufacturer Hynix Semiconductor
File Size 509.53 KB
Description 4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory
Datasheet download datasheet HY29F400BT55 Datasheet
Additional preview pages of the HY29F400BT55 datasheet.

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Full PDF Text Transcription

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HY29F400 4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirements n High Performance – Access times as fast as 45 ns n Low Power Consumption – 20 mA typical active read current in byte mode, 28 mA typical in word mode – 30 mA typical program/erase current – 5 µA maximum CMOS standby current n Compatible with JEDEC Standards – Package, pinout and command-set compatible with the single-supply Flash device standard – Provides superior inadvertent write protection n Sector Erase Architecture – Boot sector architecture with top and bottom boot block options available – One 16 Kbyte, two 8 Kbyte, one 32 Kbyte and seven 64 Kbyte sectors in byte mode – One 8 Kword, two 4 Kword, one 16 Kword and seven 32 Kword sec
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