K6R4008V1D Datasheet - Samsung semiconductor

K6R4008V1D 512Kx8 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges.

The K6R4008V1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 524,288 words by 8 bits. The K6R4008V1D uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated using SAMSUNG′s advan.

PRELIMINARY K6R4008V1D Document Title 512Kx8 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges. CMOS SRAM Revision History Rev No. Rev. 0.0 Rev. 0.1 Rev. 0.2 History Initial release with Preliminary. Add Low Ver. Change Icc, Isb and Isb1 Item ICC(Commercial) 8ns 10ns 12ns 15ns 8ns 10ns 12ns 15ns Previous 110mA 90mA 80mA 70mA 130mA 115mA 100mA 85mA 30mA 0.5mA Current 80mA 65mA 55mA 45mA 100mA 85mA 75mA 65mA 20mA 1.2mA Nov.23. 2001 Draft Data Aug.

K6R4008V1D Features

* Fast Access Time 8,10ns(Max.)

* Low Power Dissipation Standby (TTL) : 20mA(Max.) (CMOS) : 5mA(Max.) Operating K6R4008V1D-08 : 80mA(Max.) K6R4008V1D-10 : 65mA(Max.)

* Single 3.3 ±0.3V Power Supply

* TTL Compatible Inputs and Outputs

* Fully Static Operation -

K6R4008V1D_Samsungsemiconductor.pdf