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K6R4008V1D - 512Kx8 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges.

K6R4008V1D Description

PRELIMINARY K6R4008V1D Document Title 512Kx8 Bit High Speed Static RAM(3.3V Operating).Operated at Commercial and Industrial Temperature Ranges.CMO.
The K6R4008V1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 524,288 words by 8 bits.

K6R4008V1D Features

* Fast Access Time 8,10ns(Max. )
* Low Power Dissipation Standby (TTL) : 20mA(Max. ) (CMOS) : 5mA(Max. ) Operating K6R4008V1D-08 : 80mA(Max. ) K6R4008V1D-10 : 65mA(Max. )
* Single 3.3 ±0.3V Power Supply
* TTL Compatible Inputs and Outputs
* Fully Static Operation -

K6R4008V1D Applications

* The K6R4008V1D is packaged in a 400 mil 36-pin plastic SOJ and 44-pin plastic TSOP type II. FUNCTIONAL BLOCK DIAGRAM Clk Gen. A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 I/O1~I/O8 Pre-Charge Circuit Row Select Memory Array 1024 Rows 512 x 8 Columns Data Cont. CLK Gen. I/O Circuit Column Select A10 A11 A12

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Datasheet Details

Part number
K6R4008V1D
Manufacturer
Samsung semiconductor
File Size
239.61 KB
Datasheet
K6R4008V1D_Samsungsemiconductor.pdf
Description
512Kx8 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges.

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Samsung semiconductor K6R4008V1D-like datasheet