K6R4008V1D 512Kx8 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges.

Samsung semiconductor

Description

PRELIMINARY K6R4008V1D Document Title 512Kx8 Bit High Speed Static RAM(3.3V Operating).Operated at Commercial and Industrial Temperature Ranges.CMO.
The K6R4008V1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 524,288 words by 8 bits.

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Datasheet Specifications

Part number: K6R4008V1D
Manufacturer: Samsung semiconductor
File Size: 239.61 KB
Datasheet: K6R4008V1D_Samsungsemiconductor.pdf
Description: 512Kx8 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges.

Features

* Fast Access Time 8,10ns(Max. )
* Low Power Dissipation Standby (TTL) : 20mA(Max. ) (CMOS) : 5mA(Max. ) Operating K6R4008V1D-08 : 80mA(Max. ) K6R4008V1D-10 : 65mA(Max. )
* Single 3.3 ±0.3V Power Supply
* TTL Compatible Inputs and Outputs
* Fully Static Operation -

Applications

* The K6R4008V1D is packaged in a 400 mil 36-pin plastic SOJ and 44-pin plastic TSOP type II. FUNCTIONAL BLOCK DIAGRAM Clk Gen. A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 I/O1~I/O8 Pre-Charge Circuit Row Select Memory Array 1024 Rows 512 x 8 Columns Data Cont. CLK Gen. I/O Circuit Column Select A10 A11 A12

K6R4008V1D Distributors

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512Kx8 Bit High Speed Static RAM3.3V Operating. Operated Commercial and Industrial Temperature Ranges. Samsung semiconductor

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