K6R4008V1D Datasheet, ranges. equivalent, Samsung semiconductor

K6R4008V1D Features

• Ranges.
• Fast Access Time 8,10ns(Max.)
• Low Power Dissipation Standby (TTL) : 20mA(Max.) (CMOS) : 5mA(Max.) Operating K6R4008V1D-08 : 80mA(Max.) K6R4008V1D-10 : 65mA(Max.)

PDF File Details

Part number:

K6R4008V1D

Manufacturer:

Samsung semiconductor

File Size:

239.61kb

Download:

📄 Datasheet

Description:

512kx8 bit high speed static ram(3.3v operating). operated at commercial and industrial temperature ranges.. The K6R4008V1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 524,288 words by 8 bits. The K6R4008V1D uses 8

K6R4008V1D Application

• Applications The K6R4008V1D is packaged in a 400 mil 36-pin plastic SOJ and 44-pin plastic TSOP type II. FUNCTIONAL BLOCK DIAGRAM Clk Gen. A0 A1 A

TAGS

📁 Related Datasheet

K6R4008V1B - 512K x8 Bit High Speed Static RAM (Samsung semiconductor)
.. PRELIMINARY CMOS SRAM K6R4008V1B-C/B-L, K6R4008V1B-I/B-P Document Title 512Kx8 Bit High Speed Static RAM(3.3V Operating). Operat.

K6R4008V1B-C - 512K x8 Bit High Speed Static RAM (Samsung semiconductor)
.. K6R4008V1B-C/B-L, K6R4008V1B-I/B-P PRELIMINARY CMOS SRAM Document Title 512Kx8 Bit High Speed Static RAM(3.3V Operating). Operat.

K6R4008V1B-I - 512K x8 Bit High Speed Static RAM (Samsung semiconductor)
.. K6R4008V1B-C/B-L, K6R4008V1B-I/B-P PRELIMINARY CMOS SRAM Document Title 512Kx8 Bit High Speed Static RAM(3.3V Operating). Operat.

K6R4008V1B-L - 512K x8 Bit High Speed Static RAM (Samsung semiconductor)
.. K6R4008V1B-C/B-L, K6R4008V1B-I/B-P PRELIMINARY CMOS SRAM Document Title 512Kx8 Bit High Speed Static RAM(3.3V Operating). Operat.

K6R4008V1B-P - 512K x8 Bit High Speed Static RAM (Samsung semiconductor)
.. K6R4008V1B-C/B-L, K6R4008V1B-I/B-P PRELIMINARY CMOS SRAM Document Title 512Kx8 Bit High Speed Static RAM(3.3V Operating). Operat.

K6R4008V1C - 512Kx8 Bit High Speed Static (Samsung semiconductor)
.. PRELIMINARY CMOS SRAM K6R4008V1C-C/C-L, K6R4008V1C-I/C-P 3Document Title 512Kx8 Bit High Speed Static RAM(3.3V Operating). Opera.

K6R4008C1C - 512K x 8bit High Speed Static CMOS SRAM (Samsung)
PRELIMINARY K6R4008C1C-C, K6R4008C1C-E, K6R4008C1C-I CMOS SRAM Document Title 512Kx8 Bit High Speed Static RAM(5V Operating). Operated at Extended and.

K6R4008C1C-C - 512K x 8bit High Speed Static CMOS SRAM (Samsung)
PRELIMINARY K6R4008C1C-C, K6R4008C1C-E, K6R4008C1C-I CMOS SRAM Document Title 512Kx8 Bit High Speed Static RAM(5V Operating). Operated at Extended a.

K6R4008C1C-E - 512K x 8bit High Speed Static CMOS SRAM (Samsung)
PRELIMINARY K6R4008C1C-C, K6R4008C1C-E, K6R4008C1C-I CMOS SRAM Document Title 512Kx8 Bit High Speed Static RAM(5V Operating). Operated at Extended a.

K6R4008C1C-I - 512K x 8bit High Speed Static CMOS SRAM (Samsung)
PRELIMINARY K6R4008C1C-C, K6R4008C1C-E, K6R4008C1C-I CMOS SRAM Document Title 512Kx8 Bit High Speed Static RAM(5V Operating). Operated at Extended a.