K6R4008C1C Datasheet, Sram, Samsung

K6R4008C1C Features

  • Sram
  • Fast Access Time 10,12,15,20ns(Max.)
  • Low Power Dissipation Standby (TTL) : 60mA(Max.) (CMOS) : 10mA(Max.) Operating K6R4008C1C-10 : 170mA(Max.) K6R4008C1C-12 : 160mA

PDF File Details

Part number:

K6R4008C1C

Manufacturer:

Samsung

File Size:

183.32kb

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📄 Datasheet

Description:

512k x 8bit high speed static cmos sram. The K6R4008C1C is a 4,194,304-bit high-speed Static Random Access Memory organized as 524,288 words by 8 bits. The K6R4008C1C uses 8

Datasheet Preview: K6R4008C1C 📥 Download PDF (183.32kb)
Page 2 of K6R4008C1C Page 3 of K6R4008C1C

K6R4008C1C Application

  • Applications The K6R4008C1C is packaged in a 400 mil 36-pin plastic SOJ and 44-pin plastic TSOP type II. FUNCTIONAL BLOCK DIAGRAM Clk Gen. A0 A1 A

TAGS

K6R4008C1C
512K
8bit
High
Speed
Static
CMOS
SRAM
Samsung

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Stock and price

part
Samsung Semiconductor
Bristol Electronics
K6R4008C1C-JC12
17 In Stock
0
Unit Price : $0
No Longer Stocked
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