K6R4008C1C - 512K x 8bit High Speed Static CMOS SRAM

Product Overview

Samsung

Part number	K6R4008C1C
Manufacturer	Samsung
File Size	183.32 KB
Description	512K x 8bit High Speed Static CMOS SRAM
Datasheet	K6R4008C1C Datasheet
Additional preview pages of the K6R4008C1C datasheet.

The K6R4008C1C is a 4,194,304-bit high-speed Static Random Access Memory organized as 524,288 words by 8 bits.

Fast Access Time 10,12,15,20ns(Max. ).
Low Power Dissipation Standby (TTL) : 60mA(Max. ) (CMOS) : 10mA(Max. ) Operating K6R4008C1C-10 : 170mA(Max. ) K6R4008C1C-12 : 160mA(Max. ) K6R4008C1C-15 : 150mA(Max. ) K6R4008C1C-20 : 140mA(Max. ).
Single 5.0V±10% Power Supply.
TTL Compatible Inputs and Outputs.
I/O Compatible with 3.3V Device.
Fully Static Operation - No Clock or Refresh required.
Three State Outputs.
Center Power/Ground Pin.

📁 Similar Datasheet

K6R4008C1D - 512K x8 Bit High Speed Static RAM (Samsung semiconductor)
K6R4008V1B - 512K x8 Bit High Speed Static RAM (Samsung semiconductor)
K6R4008V1B-C - 512K x8 Bit High Speed Static RAM (Samsung semiconductor)
K6R4008V1B-I - 512K x8 Bit High Speed Static RAM (Samsung semiconductor)
K6R4008V1B-L - 512K x8 Bit High Speed Static RAM (Samsung semiconductor)
K6R4008V1B-P - 512K x8 Bit High Speed Static RAM (Samsung semiconductor)
K6R4008V1C - 512Kx8 Bit High Speed Static (Samsung semiconductor)
K6R4008V1D - 512Kx8 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges. (Samsung semiconductor)

Other Datasheets by Samsung

Published: Apr 16, 2005 |