K6R4008C1C - 512K x 8bit High Speed Static CMOS SRAM
The K6R4008C1C is a 4,194,304-bit high-speed Static Random Access Memory organized as 524,288 words by 8 bits.
The K6R4008C1C uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle.
The device is fabricated using SAMSUNG′s advan
PRELIMINARY K6R4008C1C-C, K6R4008C1C-E, K6R4008C1C-I CMOS SRAM Document Title 512Kx8 Bit High Speed Static RAM(5V Operating).
Operated at Extended and Industrial Temperature Ranges.
Revision History RevNo.
Rev.
0.0 Rev.
1.0 History Initial release with Preliminary.
1.1 Removed Low power Version.
1.2 Removed Data Retention Characteristics.
1.3 Changed ISB1 to 20mA 2.1 Relax D.C parameters.
Item ICC 12ns 15ns 20ns Previous 170mA 165mA 160mA Current 195mA 190mA 185mA Draft Data Feb.
12.
1999 Mar.
K6R4008C1C Features
* Fast Access Time 10,12,15,20ns(Max.)
* Low Power Dissipation Standby (TTL) : 60mA(Max.) (CMOS) : 10mA(Max.) Operating K6R4008C1C-10 : 170mA(Max.) K6R4008C1C-12 : 160mA(Max.) K6R4008C1C-15 : 150mA(Max.) K6R4008C1C-20 : 140mA(Max.)
* Single 5.0V±10% Power Supply
* TTL
