K6R4008C1C

512K x 8bit High Speed Static CMOS SRAM

Samsung

Image	Manufacturer	B2B MPN	Description	Distributor	Stock	Quantity	Price	Buy Now
	Samsung Semiconductor	K6R4008C1C-JC12		Bristol Electronics	17	0	$0

K6R4008C1C Datasheet (183.32 KB)

K6R4008C1C Datasheet Preview — Preview of K6R4008C1C PDF Datasheet

Datasheet Details

Part number:

K6R4008C1C

Manufacturer:

Samsung

File Size:

183.32 KB

Description:

512k x 8bit high speed static cmos sram

K6R4008C1C Features

* Fast Access Time 10,12,15,20ns(Max.)

* Low Power Dissipation Standby (TTL) : 60mA(Max.) (CMOS) : 10mA(Max.) Operating K6R4008C1C-10 : 170mA(Max.) K6R4008C1C-12 : 160mA(Max.) K6R4008C1C-15 : 150mA(Max.) K6R4008C1C-20 : 140mA(Max.)

* Single 5.0V±10% Power Supply

* TTL

K6R4008C1C General Description

The K6R4008C1C is a 4,194,304-bit high-speed Static Random Access Memory organized as 524,288 words by 8 bits. The K6R4008C1C uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated using SAMSUNG′s advan.

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K6R4008C1C 512K 8bit High Speed Static CMOS SRAM Samsung

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