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K6R4008V1B - 512K x8 Bit High Speed Static RAM

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Samsung semiconductor

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K6R4008V1B 512K x8 Bit High Speed Static RAM by Samsung semiconductor - Datasheet Preview — Datasheet preview – K6R4008V1B

Datasheet Details

Part number	K6R4008V1B
Manufacturer	Samsung semiconductor
File Size	182.98 KB
Description	512K x8 Bit High Speed Static RAM
Datasheet	K6R4008V1B Datasheet
Additional preview pages of the K6R4008V1B datasheet.

Product details

Description

The K6R4008V1B is a 4,194,304-bit high-speed Static Random Access Memory organized as 524,288 words by 8 bits.

Features

Fast Access Time 10,12,15ns(Max. ).
Low Power Dissipation Standby (TTL) : 50mA(Max. ) (CMOS) : 10mA(Max. ) 1.2mA(Max. )- L-Ver. Operating K6R4008V1B-10 : 205mA(Max. ) K6R4008V1B-12 : 200mA(Max. ) K6R4008V1B-15 : 195mA(Max. ).
Single 3.3 ±0.3V Power Supply.
TTL Compatible Inputs and Outputs.
Fully Static Operation - No Clock or Refresh required.
Three State Outputs.
2V Minimum Data Retention ; L-Ver. only.
Center Power/Ground Pin C.

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Published: Dec 12, 2007 |