K6R4008V1B Datasheet, Ram, Samsung semiconductor

K6R4008V1B Features

• Ram
• Fast Access Time 10,12,15ns(Max.)
• Low Power Dissipation Standby (TTL) : 50mA(Max.) (CMOS) : 10mA(Max.) 1.2mA(Max.)- L-Ver. Operating K6R4008V1B-10 : 205mA(Max.) K6R4

PDF File Details

Part number:

K6R4008V1B

Manufacturer:

Samsung semiconductor

File Size:

182.98kb

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📄 Datasheet

Description:

512k x8 bit high speed static ram. The K6R4008V1B is a 4,194,304-bit high-speed Static Random Access Memory organized as 524,288 words by 8 bits. The K6R4008V1B uses 8

K6R4008V1B Application

• Applications The K6R4008V1B is packaged in a 400 mil 36-pin plastic SOJ or TSOP(II) forward or 44-pin plastic TSOP(II) forward. FUNCTIONAL BLOCK D

TAGS

K6R4008V1B

Samsung semiconductor

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