K6R4008V1B Datasheet - Samsung semiconductor

K6R4008V1B 512K x8 Bit High Speed Static RAM

The K6R4008V1B is a 4,194,304-bit high-speed Static Random Access Memory organized as 524,288 words by 8 bits. The K6R4008V1B uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated using SAMSUNG′s advan.

www.DataSheet4U.com PRELIMINARY CMOS SRAM K6R4008V1B-C/B-L, K6R4008V1B-I/B-P Document Title 512Kx8 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. Rev. 0.0 Rev. 1.0 History Initial release with Design Target. Release to Preliminary Data Sheet. 1.1. Replace Design Target to Preliminary. Release to Final Data Sheet. 2.1. Delete Preliminary. 2.2. Add 30pF capacitive in test load. 2.3. Relax DC characteristics. Item Pre.

K6R4008V1B Features

* Fast Access Time 10,12,15ns(Max.)

* Low Power Dissipation Standby (TTL) : 50mA(Max.) (CMOS) : 10mA(Max.) 1.2mA(Max.)- L-Ver. Operating K6R4008V1B-10 : 205mA(Max.) K6R4008V1B-12 : 200mA(Max.) K6R4008V1B-15 : 195mA(Max.)

* Single 3.3 ±0.3V Power Supply

* TTL Compatibl

K6R4008V1B_Samsungsemiconductor.pdf