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K6R4008V1B

512K x8 Bit High Speed Static RAM

K6R4008V1B Features

* Fast Access Time 10,12,15ns(Max.)

* Low Power Dissipation Standby (TTL) : 50mA(Max.) (CMOS) : 10mA(Max.) 1.2mA(Max.)- L-Ver. Operating K6R4008V1B-10 : 205mA(Max.) K6R4008V1B-12 : 200mA(Max.) K6R4008V1B-15 : 195mA(Max.)

* Single 3.3 ±0.3V Power Supply

* TTL Compatibl

K6R4008V1B General Description

The K6R4008V1B is a 4,194,304-bit high-speed Static Random Access Memory organized as 524,288 words by 8 bits. The K6R4008V1B uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated using SAMSUNG′s advan.

K6R4008V1B Datasheet (182.98 KB)

Preview of K6R4008V1B PDF

Datasheet Details

Part number:

K6R4008V1B

Manufacturer:

Samsung semiconductor

File Size:

182.98 KB

Description:

512k x8 bit high speed static ram.
www.DataSheet4U.com PRELIMINARY CMOS SRAM K6R4008V1B-C/B-L, K6R4008V1B-I/B-P Document Title 512Kx8 Bit High Speed Static RAM(3.3V Operating). Operat.

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K6R4008V1B 512K Bit High Speed Static RAM Samsung semiconductor

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