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K6R4008C1C-E Datasheet - Samsung

K6R4008C1C-E 512K x 8bit High Speed Static CMOS SRAM

PRELIMINARY K6R4008C1C-C, K6R4008C1C-E, K6R4008C1C-I CMOS SRAM Document Title 512Kx8 Bit High Speed Static RAM(5V Operating). Operated at Extended and Industrial Temperature Ranges. Revision History RevNo. History Rev. 0.0 Initial release with Preliminary. Rev. 1.0 1.1 Removed Low power Version. 1.2 Removed Data Retention Characteristics. 1.3 Changed ISB1 to 20mA Rev. 2.0 2.1 Relax D.C parameters. Item 12ns ICC 15ns 20ns Previous 170mA 165mA 160mA Current 195mA 190mA 185mA 2.2 Relax .

K6R4008C1C-E Datasheet (183.32 KB)

Preview of K6R4008C1C-E PDF

Datasheet Details

Part number:

K6R4008C1C-E

Manufacturer:

Samsung

File Size:

183.32 KB

Description:

512k x 8bit high speed static cmos sram.

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K6R4008C1C-E 512K 8bit High Speed Static CMOS SRAM Samsung

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