K6R4008V1C Datasheet - Samsung semiconductor

K6R4008V1C 512Kx8 Bit High Speed Static

The K6R4008V1C is a 4,194,304-bit high-speed Static Random Access Memory organized as 524,288 words by 8 bits. The K6R4008V1C uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated using SAMSUNG′s advan.

www.DataSheet4U.com PRELIMINARY CMOS SRAM K6R4008V1C-C/C-L, K6R4008V1C-I/C-P 3Document Title 512Kx8 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. Rev. 0.0 Rev. 1.0 History Initial release with Preliminary. 1.1 Removed Low power Version. 1.2 Removed Data Retention Characteristics. 1.3 Changed ISB1 to 20mA Relax D.C parameters. Item ICC 12ns 15ns 20ns Previous 160mA 155mA 150mA Current 195mA 190mA 185mA Final Draft .

K6R4008V1C Features

* Fast Access Time 10,12,15ns(Max.)

* Low Power Dissipation Standby (TTL) : 60mA(Max.) (CMOS) : 10mA(Max.) 1.2mA(Max.) L-Ver. only Operating K6R4008V1C-10 : 155mA(Max.) K6R4008V1C-12 : 145mA(Max.) K6R4008V1C-15 : 135mA(Max.)

* Single 3.3±0.3V Power Supply

* TTL Compat

K6R4008V1C_Samsungsemiconductor.pdf