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K6R4008V1C

512Kx8 Bit High Speed Static

K6R4008V1C Features

* Fast Access Time 10,12,15ns(Max.)

* Low Power Dissipation Standby (TTL) : 60mA(Max.) (CMOS) : 10mA(Max.) 1.2mA(Max.) L-Ver. only Operating K6R4008V1C-10 : 155mA(Max.) K6R4008V1C-12 : 145mA(Max.) K6R4008V1C-15 : 135mA(Max.)

* Single 3.3±0.3V Power Supply

* TTL Compat

K6R4008V1C General Description

The K6R4008V1C is a 4,194,304-bit high-speed Static Random Access Memory organized as 524,288 words by 8 bits. The K6R4008V1C uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated using SAMSUNG′s advan.

K6R4008V1C Datasheet (175.22 KB)

Preview of K6R4008V1C PDF

Datasheet Details

Part number:

K6R4008V1C

Manufacturer:

Samsung semiconductor

File Size:

175.22 KB

Description:

512kx8 bit high speed static.
www.DataSheet4U.com PRELIMINARY CMOS SRAM K6R4008V1C-C/C-L, K6R4008V1C-I/C-P 3Document Title 512Kx8 Bit High Speed Static RAM(3.3V Operating). Opera.

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K6R4008V1C 512Kx8 Bit High Speed Static Samsung semiconductor

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