Datasheet Details
- Part number
- K6R4008V1C
- Manufacturer
- Samsung semiconductor
- File Size
- 175.22 KB
- Datasheet
- K6R4008V1C_Samsungsemiconductor.pdf
- Description
- 512Kx8 Bit High Speed Static
K6R4008V1C Description
www.DataSheet4U.com PRELIMINARY CMOS SRAM K6R4008V1C-C/C-L, K6R4008V1C-I/C-P 3Document Title 512Kx8 Bit High Speed Static RAM(3.3V Operating).Opera.
The K6R4008V1C is a 4,194,304-bit high-speed Static Random Access Memory organized as 524,288 words by 8 bits.
K6R4008V1C Features
* Fast Access Time 10,12,15ns(Max. )
* Low Power Dissipation Standby (TTL) : 60mA(Max. ) (CMOS) : 10mA(Max. ) 1.2mA(Max. ) L-Ver. only Operating K6R4008V1C-10 : 155mA(Max. ) K6R4008V1C-12 : 145mA(Max. ) K6R4008V1C-15 : 135mA(Max. )
* Single 3.3±0.3V Power Supply
* TTL Compat
K6R4008V1C Applications
* The K6R4008V1C is packaged in a 400 mil 36-pin plastic SOJ and 44-pin plastic TSOP type II. FUNCTIONAL BLOCK DIAGRAM
Clk Gen. A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 I/O1 ~I/O8
ORDERING INFORMATION
K6R4008V1C-C10/C12/C15 Commercial Temp. Industrial Temp. K6R4008V1C-I10/I12/I15
Pre-Charge Circuit
Row Sele
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