K6R4016C1D - CMOS SRAM

Product Overview

Samsung

Part number	K6R4016C1D
Manufacturer	Samsung
File Size	165.60 KB
Description	CMOS SRAM
Datasheet	K6R4016C1D Datasheet
Additional preview pages of the K6R4016C1D datasheet.

The K6R4016C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits.

Fast Access Time 10ns(Max. ).
Low Power Dissipation Standby (TTL) : 20mA(Max. ) (CMOS) : 5mA(Max. ) Operating K6R4016C1D-10 : 65mA(Max. ).
Single 5.0V± 10 % Power Supply.
TTL Compatible Inputs and Outputs.
Fully Static Operation - No Clock or Refresh required.
Three State Outputs.
Center Power/Ground Pin Configuration.
Data Byte Control : LB : I/O1~ I/O8, UB : I/O9~ I/O16.
Standard Pin Configuration K6R4016C1D-J : 44-S.

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Published: Apr 22, 2014 |