K6R4016C1D CMOS SRAM

Samsung

Description

PRELIMPreliminaryPPPPPPPPPINARY K6R4016C1D Document Title 256Kx16 Bit High Speed Static RAM(5.0V Operating).Operated at Commercial and Industrial Tem.
The K6R4016C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits.

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Datasheet Specifications

Part number: K6R4016C1D
Manufacturer: Samsung
File Size: 165.60 KB
Datasheet: K6R4016C1D-Samsung.pdf
Description: CMOS SRAM

Features

* Fast Access Time 10ns(Max. )
* Low Power Dissipation Standby (TTL) : 20mA(Max. ) (CMOS) : 5mA(Max. ) Operating K6R4016C1D-10 : 65mA(Max. )
* Single 5.0V± 10 % Power Supply
* TTL Compatible Inputs and Outputs
* Fully Static Operation - No Clock or Refresh require

Applications

* The K6R4016C1D is packaged in a 400mil 44-pin plastic SOJ or TSOP(II) forward or 48 T BGA. FUNCTIONAL BLOCK DIAGRAM Clk Gen. A0 A1 Pre-Charge Circuit Row Select A2 A3 A4 A5 A6 A7 A8 A9 I/O1 ~I/O 8 I/O9 ~I/O 16 Memory Array 1024 Rows 256 x 16 Columns Data Cont. Data Cont. Gen. CLK I/O Circuit

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K6R4016C1D CMOS SRAM Samsung

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