Datasheet Details
- Part number
- K6R4016C1D
- Manufacturer
- Samsung
- File Size
- 165.60 KB
- Datasheet
- K6R4016C1D-Samsung.pdf
- Description
- CMOS SRAM
K6R4016C1D Description
PRELIMPreliminaryPPPPPPPPPINARY K6R4016C1D Document Title 256Kx16 Bit High Speed Static RAM(5.0V Operating).Operated at Commercial and Industrial Tem.
The K6R4016C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits.
K6R4016C1D Features
* Fast Access Time 10ns(Max. )
* Low Power Dissipation Standby (TTL) : 20mA(Max. ) (CMOS) : 5mA(Max. ) Operating K6R4016C1D-10 : 65mA(Max. )
* Single 5.0V± 10 % Power Supply
* TTL Compatible Inputs and Outputs
* Fully Static Operation - No Clock or Refresh require
K6R4016C1D Applications
* The K6R4016C1D is packaged in a 400mil 44-pin plastic SOJ or TSOP(II) forward or 48 T BGA. FUNCTIONAL BLOCK DIAGRAM
Clk Gen. A0 A1
Pre-Charge Circuit
Row Select
A2 A3 A4 A5 A6 A7 A8 A9 I/O1 ~I/O 8 I/O9 ~I/O 16
Memory Array 1024 Rows 256 x 16 Columns
Data Cont. Data Cont. Gen. CLK
I/O Circuit
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