K6R4016V1 Datasheet | Samsung Semiconductor

K6R4004C1D Document Title 1Mx4 Bit High Speed Static RAM(5.0V Operating). Operated at mercial and Industrial Temperature Ranges. PRELIMINARY CMOS SRAM Revision History Rev No. Rev. 0.0 Rev. 0.1 History Initial release with Preliminary. Change Icc. Isb and Isb1 Item ICC(mercial) 10ns 12ns 15ns 10ns 12ns 15ns Previous 90m A 80m A 70m A 115m A 100m A 85m A 30m A 10m A Current 65m A 55m A 45m A 85m A 75m A 65m A 20m A 5m A Draft Data September. 7. 2001 November, 3. 2001 Remark Preliminary Preliminary ICC(Industrial) ISB ISB1 Rev. 0.2 1. Correct AC parameters : Read & Write Cycle m A 2. Delete Low Ver. 3. Delete Data Retention Characteristics 1. Delete 15ns speed bin. 2. Change Icc for Industrial mode. Item 10ns ICC(Industrial) 12ns November, 3. 2001 Preliminary Rev. 0.3 December, 18. 2001 Previous 85m A 75m A Current 75m A 65m A Preliminary Rev. 1.0 1. Final datasheet release. 2. Delete 12ns speed bin. 3. Delete UB,LB releated AC characteristics and timing diagram. 4. Correct Read Cycle time waveform(2). July, 09, 2002 Final The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or contact Headquarters. -1- Rev 1.0 July 2002 K6R4004C1D 4Mb Async. Fast SRAM Ordering Information Org. 1M x4 Part Number K6R4004C1D-JC(I) 10 K6R4004V1D-JC(I) 08/10 512K x8 K6R4008C1D-J(T)C(I) 10 K6R4008V1D-J(T)C(I) 08/10 256K x16 K6R4016C1D-J(T,E)C(I) 10 K6R4016V1D-J(T,E)C(I,L,P) 08/10 VDD(V) 5 3.3 5 3.3 5 3.3 Speed ( ns ) 10 8/10 10 8/10 10 8/10 J : 36-SOJ T : 44-TSOP2 J : 44-SOJ T : 44-TSOP2 E : 48-TBGA PRELIMINARY CMOS SRAM PKG J : 32-SOJ Temp. & Power C : mercial Temperature ,Normal Power Range I : Industrial Temperature ,Normal Power Range L : mercial Temperature ,Low Power Range P :...