K6R4016V1C Datasheet | Samsung Semiconductor

.. PRELIMPreliminary PPPPPPPPPINARY CMOS SRAM K6R4016V1C-C/C-L, K6R4016V1C-I/C-P Document Title 256Kx16 Bit High Speed Static RAM(3.3V Operating). Operated at mercial and Industrial Temperature Ranges. Revision History Rev No. Rev. 0.0 Rev. 1.0 History Initial release with Preliminary. 1.1 Removed Low power Version. 1.2 Removed Data Retention Characteristics. 1.3 Changed ISB1 to 20m A Relax D.C parameters. Item ICC 12ns 15ns 20ns Previous 180m A 175m A 170m A Current 200m A 195m A 190m A Mar. 27. 2000 Final Draft Data Feb. 12. 1999 Mar. 29. 1999 Remark Preliminary Preliminary Rev. 2.0 Aug. 19. 1999 Preliminary Rev. 3.0 3.1 Delete Preliminary 3.2 Update D.C parameters and 10ns part. Previous ICC Isb Isb1 10ns 12ns 200m A 70m A 20m A 15ns 195m A 20ns 190m A ICC 160m A 150m A 140m A 130m A Current Isb 60m A Isb1 10m A Rev. 4.0 Rev. 5.0 Add Low Power-Ver. Delete 20ns speed bin Apr. 24. 2000 Sep. 24. 2001 Final Final The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or contact Headquarters. -1- Rev 5.0 September 2001 .. PRELIMPreliminary PPPPPPPPPINARY CMOS SRAM K6R4016V1C-C/C-L, K6R4016V1C-I/C-P 256K x 16 Bit High-Speed CMOS Static RAM Features - Fast Access Time 10,12,15ns(Max.)...