Datasheet4U Logo Datasheet4U.com

K6R4016V1C - 256Kx16 Bit High Speed Static RAM

Description

The K6R4016V1C is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits.

The K6R4016V1C uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cycle.

Features

  • Fast Access Time 10,12,15ns(Max. ).
  • Low Power Dissipation Standby (TTL) : 60mA(Max. ) (CMOS) : 10mA(Max. ) 1.2mA(Max. ) L-Ver. only Operating K6R4016V1C-10 : 160mA(Max. ) K6R4016V1C-12 : 150mA(Max. ) K6R4016V1C-15 : 140mA(Max. ).
  • Single 3.3 ±0.3V Power Supply.
  • TTL Compatible Inputs and Outputs.
  • Fully Static Operation - No Clock or Refresh required.
  • Three State Outputs.
  • 2V Minimum Data Retention : L-Ver. only.
  • Center Power/Ground P.

📥 Download Datasheet

Datasheet preview – K6R4016V1C

Datasheet Details

Part number K6R4016V1C
Manufacturer Samsung semiconductor
File Size 228.34 KB
Description 256Kx16 Bit High Speed Static RAM
Datasheet download datasheet K6R4016V1C Datasheet
Additional preview pages of the K6R4016V1C datasheet.

📁 Similar Datasheet

  • K6R4016C1D - CMOS SRAM (Samsung)
  • K6R4008C1C - 512K x 8bit High Speed Static CMOS SRAM (Samsung)
  • K6R4008C1C-C - 512K x 8bit High Speed Static CMOS SRAM (Samsung)
  • K6R4008C1C-E - 512K x 8bit High Speed Static CMOS SRAM (Samsung)
  • K6R4008C1C-I - 512K x 8bit High Speed Static CMOS SRAM (Samsung)
Other Datasheets by Samsung semiconductor
  • K6R4016V1 - 1Mx4 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.
  • K6R4016V1D - 1Mx4 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.
  • K6R4004C1C-C - 1Mx4 Bit High Speed Static RAM
  • K6R4004C1C-E - 1Mx4 Bit High Speed Static RAM
  • K6R4004C1C-I - 1Mx4 Bit High Speed Static RAM
  • K6R4004C1D - 1Mx4 Bit High Speed Static RAM
  • K6R4004V1D - 1Mx4 Bit High Speed Static RAM
  • K6R4004V1D - 1Mx4 Bit High Speed Static RAM

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com PRELIMPreliminaryPPPPPPPPPINARY CMOS SRAM K6R4016V1C-C/C-L, K6R4016V1C-I/C-P Document Title 256Kx16 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. Rev. 0.0 Rev. 1.0 History Initial release with Preliminary. 1.1 Removed Low power Version. 1.2 Removed Data Retention Characteristics. 1.3 Changed ISB1 to 20mA Relax D.C parameters. Item ICC 12ns 15ns 20ns Previous 180mA 175mA 170mA Current 200mA 195mA 190mA Mar. 27. 2000 Final Draft Data Feb. 12. 1999 Mar. 29. 1999 Remark Preliminary Preliminary Rev. 2.0 Aug. 19. 1999 Preliminary Rev. 3.0 3.1 Delete Preliminary 3.2 Update D.C parameters and 10ns part.
Published: |