* Voltage Supply: 3.0V~5.5V
* Organization - Memory Cell Array : 512K x 8 - Data Register : 32 x 8 bit
* Automatic Program and Erase (Typical) - Frame Program : 32 Byte in 500µs - Block Erase : 4K Byte in 6ms
* 32-Byte Frame Read Operation - Random Access : 15 µs(Max.
KM29W040AT Datasheet (359.52 KB)
KM29W040AT
Samsung semiconductor
359.52 KB
512k x 8 bit nand flash memory.
KM29W040AT, KM29W040AIT Document Title 512K x 8 bit NAND Flash Memory FLASH MEMORY Revision History Revision No. History 0.0 1.0 1.1 Initial issue. .
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