• Part: SWD1N60
  • Manufacturer: Samwin
  • Size: 855.60 KB
Download SWD1N60 Datasheet PDF
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SWD1N60 Key Features

  • High ruggedness
  • RDS(ON) (Max 12 Ω)@VGS=10V
  • Gate Charge (Max 6nC)
  • Improved dv/dt Capability
  • 100% Avalanche Tested

Related Samwin Datasheets

Part Number Description
SWD100N03 N-Channel MOSFET
SWD19N10 N-Channel MOSFET

SWD1N60 Description

This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC converter block and switch mode power supply.