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1N5819W - SCHOTTKY BARRIER DIODE

This page provides the datasheet information for the 1N5819W, a member of the 1N5817W SCHOTTKY BARRIER DIODE family.

Datasheet Summary

Features

  • Metal silicon junction, majority carrier conduction.
  • Guarding for overvoltage protection.
  • Low power loss, high efficiency.
  • High current capability.
  • Low forward voltage drop.
  • High surge capability.
  • For use in low voltage, high frequency inverters, free wheeling, and polarity protection.

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Datasheet preview – 1N5819W

Datasheet Details

Part number 1N5819W
Manufacturer SangdeSTMicroelectronics
File Size 125.40 KB
Description SCHOTTKY BARRIER DIODE
Datasheet download datasheet 1N5819W Datasheet
Additional preview pages of the 1N5819W datasheet.

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Full PDF Text Transcription

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Technical Data Data Sheet N1756, Rev. - 1N5817W-1N5819W SCHOTTKY BARRIER DIODE Features: • Metal silicon junction, majority carrier conduction • Guarding for overvoltage protection • Low power loss, high efficiency • High current capability • Low forward voltage drop • High surge capability • For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications Mechanical Data: • Case: SOD-123FL molded plastic body • Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 • Polarity: Color band denotes cathode end • Mounting Position: Any Mechanical Dimensions: In mm/Inches 1N5817W-1N5819W Green Products Symbol A B C D E G Millimeters Min Max 3.55 3.85 2.60 2.90 1.75 1.95 0.90 1.40 0.70 1.20 0.25 - Inches Min Max 0.140 0.152 0.102 0.114 0.
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