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B1166 - 2SB1166

Features

  • Low collector-to-emitter saturation voltage.
  • High fT.
  • Excellent linearity of hFE.
  • Fast switchint time. Package Dimensions unit:mm 2043B [2SB1166/2SD1723] 8.0 4.0 2.0 2.7 1.5 9.0 11.0 1.6 0.8 3.0 15.5 0.8 0.6 0.5 ( ) : 2SB1166 Specifications Absolute Maximum Ratings at Ta = 25˚C 12 3 2.4 4.8 1.2 1 : Emitter 2 : Collector 3 : Base SANYO : TO-126LP Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-.

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Ordering number:ENN2021A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1166/2SD1723 50V/8A Switching Applications Applications · Relay drivers, high-speed inverters, converters. Features · Low collector-to-emitter saturation voltage. · High fT. · Excellent linearity of hFE. · Fast switchint time. Package Dimensions unit:mm 2043B [2SB1166/2SD1723] 8.0 4.0 2.0 2.7 1.5 9.0 11.0 1.6 0.8 3.0 15.5 0.8 0.6 0.5 ( ) : 2SB1166 Specifications Absolute Maximum Ratings at Ta = 25˚C 12 3 2.4 4.8 1.
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