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Sanyo Electric Components Datasheet

ISB-E48-0 Datasheet

Charger Circuit Voltage Sensor + 3 P-channel MOSFETs

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ISB-E48-0 pdf
Ordering number : EISB0006A
ISB-E48-0,
ISB-E48-1
Ultrathin Miniature Package
Charger Circuit Voltage Sensor
+ 3 P-channel MOSFETs
Overview
The ISB-E48-0, ISB-E48-1 incorporates in its power input block a high-precision voltage detector that provides
protection against overvoltage. The ISB-E48-0, ISB-E48-1 also includes three P-channel MOSFET chips and allows for
easy implementation of a charger circuit for cell phones and other portable equipment by incorporating the IC in a
current interrupting switch activated by a voltage-detector or in an output block of a charger control IC.
Application
Battery charger for portable equipment including cell phones.
Features
On-chip high-precision voltage detector and three P-channel MOSFET chips.
Miniature package makes this IC ideal for miniaturization of electronic devices and high-density mounting on printed
circuit boards.
ISB is a registered trademark of SANYO Electric Co., Ltd.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer's products or
equipment.
50907HKIM / 92706 / 42806HKIM No.0006-1/6


Sanyo Electric Components Datasheet

ISB-E48-0 Datasheet

Charger Circuit Voltage Sensor + 3 P-channel MOSFETs

No Preview Available !

ISB-E48-0 pdf
ISB-E48-0, ISB-E48-1
Specifications
Absolute Maximum Ratings at Ta = 25°C
Internal Device
Parameter
Symbol
IC Input voltage
Output current
Output voltage
Allowable power dissipation
TR1 Drain-to-source voltage
Gate-to-source voltage
Drain current
Allowable power dissipation
TR2 and TR3
Drain-to-source voltage
Gate-to-source voltage
Drain current
Allowable power dissipation
Operating ambient temperature
VIN
IOUT
VOUT
PD-IC
VDSS
VGSS
ID
PD-T
VDSS
VGSS
ID
PD-T
Topr
Storage ambient temperature
Tstg
* Specified board: 40mm×25mm×0.8mm FR4 board
Conditions
When mounted on a specified board *
When mounted on a specified board *
When mounted on a specified board *
Ratings
12
50
VSS-0.3 to VIN+0.3
0.65
-20
±10
-2.0
1.4
-20
±10
-4
1.5
-30 to +85
-40 to +125
Unit
V
mA
V
W
V
V
A
W
V
V
A
W
°C
°C
Electrical Characteristics
Overall Operating Characteristics at Ta = 25°C, with a dedicated test circuit
Internal Device
Parameter
IC Detecting voltage
Current consumption
Output current
TR1 Drain-to-source breakdown voltage
Drain-to-source cutoff current
Gate-to-source leakage current
Gate-to-source cutoff voltage
Drain-to-source on resistance
TR2 and TR3
Drain-to-source breakdown voltage
Drain-to-source cutoff current
Gate-to-source leakage current
Gate-to-source cutoff voltage
Drain-to-source on resistance
Symbol
Conditions
VDF
ISS
IOUT1
IOUT2
VDSS
IDSS
IGSS
VGS(off)
RDS(on)1
RDS(on)2
RDS(on)3
VDSS
IDSS
IGSS
VGS(off)
RDS(on)1
RDS(on)2
ISB-E48-0
ISB-E48-1
VIN=3.0V
ISB-E48-0
NchVDS=0.5V,VIN=2.0V
ISB-E48-1
NchVDS=0.5V,VIN=3.0V
PchVDS=2.1V, VIN=8.0V
ID=-1mA, VGS=0V
VDS=-20V, VGS=0V
VGS=±8V, VDS=0V
VDS=-10V, ID=-1mA
ID=-1A, VGS=-4V
ID=-0.5A, VGS=-2.5V
ID=-0.1A, VGS=-1.8V
ID=-1mA, VGS=0V
VDS=-20V, VGS=0V
VGS=±8V, VDS=0V
VDS=-10V, ID=-1mA
ID=-2A, VGS=-4.5V
* Design guaranteed value
ID=-1A, VGS=-2.5V
* Design guaranteed value
min
2.646
3.234
Ratings
typ
2.7
3.3
0.9
3.0 7.7
max
2.754
3.366
3.0
Unit
V
V
µA
mA
5.0 10.1
-10.0
-20
-0.3
125
155
195
-20
-0.4
mA
-2.0 mA
V
-10 µA
±10 µA
-1.0 V
165 m
220 m
280 m
V
-1.0 µA
±10 µA
-1.3 V
63 m
96 m
No.0006-2/6


Part Number ISB-E48-0
Description Charger Circuit Voltage Sensor + 3 P-channel MOSFETs
Maker Sanyo
Total Page 6 Pages
PDF Download
ISB-E48-0 pdf
ISB-E48-0 Datasheet PDF
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