CMOS Flash EEPROM Technology Single 3.3-Volt Read and Write Operations Sector Erase Capability: 256 Bytes per sector Operating Frequency: 10MHz Low Power Consumption Acti.

the LE25FV051T is offered with a guaranteed sector write endurance of 104 cycles. Data retention is rated greater than .

The LE25FV051T is a 64K x 8 CMOS sector erase, byte programmable serial Flash EEPROM. The LE25FV051T is manufactured using SANYO's proprietary, high performance CMOS Flash EEPROM technology. Breakthroughs in EEPROM cell design and process architectur.

LE25FV055T

LE25FV101T

LE25FS406

LE25FU106B

LE25FU206

LE25FU406B

LE25FW203A

LE25FW403A

LE25FW418A

LE25FW806

LE25FW808

LE25AB

LE25ABD