• Part: 2SB1295
  • Description: PNP/NPN Epitaxial Planar Silicon Transistors
  • Category: Transistor
  • Manufacturer: SANYO
  • Size: 131.39 KB
Download 2SB1295 Datasheet PDF
SANYO
2SB1295
Features - Large current capacity. - Low collector to emitter saturation voltage. - Very small-sized package permitting sets to be made smaller and slimer. Package Dimensions unit:mm 2018A [2SB1295/2SD1935] ( ) : 2SB1295 Specifications C : Collector B : Base E : Emitter SANYO : CP Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions Ratings (- )15 (- )15 (- )5 (- )0.8 (- )3 200 150 - 55 to +150 Electrical Characteristics at Ta = 25˚C Parameter Symbol Conditions Ratings min typ max Collector Cutoff Current Emitter Cutoff Current DC Current Gain ICBO IEBO h FE1 VCB=(- )12V, IE=0 VEB=(- )4V, IC=0 VCE=(- )2V, IC=(- )50m A 135- (- )100 (- )100 900- (600) h FE2 VCE=(- )2V, IC=(- )800m A - : The 2SB1295/2SD1935 are classified by 50m A h FE as follows : 2SB1295...