* High fT (fT=1.2GHz typ).
* High breakdown voltage (VCBO=100V, VCEO=80V).
* Large current (IC=500mA).
* Small reverse transfer capacitance (Cre=3.8pF/ VCB=30V).
* Adoption of FBET process. Package Dimensions unit:mm 2010C [2SC4411] 10.2 3.6 5.1 4.5 1.3 2.7 6.3 15.1 1.2
2SC4411
Sanyo Semicon Device
84.02 KB
Pnp transistor.
Ordering number:EN3790 PNP Epitaxial Planar Silicon Transistor 2SC4411 Ultrahigh-Definition CRT Display Video Output Applications Applications .
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