* Adoption of MBIT process.
* Large allowable collector dissipation.
* High breakdown voltage (VCEO≥300V).
* Excellent high frequency characteristic (Cre=1.8pF typ).
* Usage of radial taping to meet automatic mounting. Specifications Package Dimensions unit:mm 2084B [2SC4884]
2SC4884
Sanyo Semicon Device
103.92 KB
Npn transistor.
Ordering number:EN4136 NPN Epitaxial Planar Silicon Transistor 2SC4884 High-Definition CRT Display Video Output Applications Applications High.
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