* Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter V
2SC6081
Sanyo Semicon Device
68.51 KB
Npn epitaxial planar silicon transistor.
www.DataSheet4U.com Ordering number : ENA0278 2SC6081 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC6081 Application.
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