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Sanyo Electric Components Datasheet

2SC6096 Datasheet

NPN Epitaxial Planar Silicon Transistor

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2SC6096 pdf
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Ordering number : ENA0434
2SC6096
SANYO Semiconductors
DATA SHEET
2SC6096 NPN Epitaxial Planar Silicon Transistor
High-Voltage Switching Applications
Applications
DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter.
Features
Adoption of FBET, MBIT process.
High current capacitance.
Low collector-to-emitter saturation voltage.
High-speed switching.
High allowable power dissipation.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCES
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Electrical Characteristics at Ta=25°C
Conditions
Mounted on a ceramic board (250mm2!0.8mm)
Tc=25°C
Ratings
120
120
100
6.5
2
3
400
1.3
3.5
150
--55 to +150
Unit
V
V
V
V
A
A
mA
W
W
°C
°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Marking : QG
Symbol
ICBO
IEBO
hFE
Conditions
VCB=80V, IE=0A
VEB=4V, IC=0A
VCE=5V, IC=100mA
min
300
Ratings
typ
max
Unit
1 µA
1 µA
600
Continued on next page.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
82306 / 62006EA MS IM TB-00002425 No. A0434-1/4


Sanyo Electric Components Datasheet

2SC6096 Datasheet

NPN Epitaxial Planar Silicon Transistor

No Preview Available !

2SC6096 pdf
Continued from preceding page.
Parameter
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Package Dimensions
unit : mm
7007A-004
Top View
4.5
1.6
1
0.4
2
0.5
1.5
3.0
3
2SC6096
Symbol
Conditions
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CES
V(BR)CEO
V(BR)EBO
ton
tstg
tf
VCE=10V, IC=300mA
VCB=10V, f=1MHz
IC=1A, IB=100mA
IC=1A, IB=100mA
IC=10µA, IE=0A
IC=100µA, RBE=0
IC=1mA, RBE=
IE=10µA, IC=0A
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
min
120
120
100
6.5
Ratings
typ
300
13
100
0.85
40
1100
40
max
150
1.2
Unit
MHz
pF
mV
V
V
V
V
V
ns
ns
ns
Switching Time Test Circuit
PW=20µs
D.C.1%
IB1
IB2
OUTPUT
1.5
INPUT VR10
RB
RL
50
++
100µF
470µF
VBE= --5V
VCC=50V
0.4 10IB1= --10IB2=IC=0.5A
0.75
Bottom View
1 : Base
2 : Collector
3 : Emitter
SANYO : PCP
IC -- VCE
2.0
1.8
80mA
60mA
1.6 40mA
1.4
1.2 20mA
1.0
10mA
0.8
5mA
0.6
2mA
0.4
0.2
0 IB=0mA
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Collector-to-Emitter Voltage, VCE -- V IT11115
IC -- VBE
2.0
VCE=5V
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Base-to-Emitter Voltage, VBE -- V IT11116
No. A0434-2/4


Part Number 2SC6096
Description NPN Epitaxial Planar Silicon Transistor
Maker Sanyo Semicon Device
Total Page 4 Pages
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