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Sanyo Electric Components Datasheet

2SD1236 Datasheet

PNP / NPN Epitaxial Planar Silicon Transistors

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Ordering number : ENN1027A
2SB920 / 2SD1236
PNP / NPN Epitaxial Planar Silicon Transistors
2SB920 / 2SD1236
Large Current Switching Applications
Applications
Large current switching of relay drivers, high-speed
inverters, converters.
Package Dimensions
unit : mm
2010C
Features
Low collector-to-emitter saturation voltage :
VCE(sat)=--0.5V (PNP), 0.4V (NPN) max.
Large current capacity.
[2SB920 / 2SD1236]
10.2
3.6 5.1
4.5
1.3
1.2
0.8
Specifications
( ) : 2SB920
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Symbol
VCBO
VCEO
VEBO
IC
ICP
Collector Dissipation
PC
Junction Temperature
Storage Temperature
Tj
Tstg
Electrical Characteristics at Ta=25°C
Tc=25°C
123
2.55 2.55
Conditions
Parameter
Collector Cutoff Current
Emitter Cutoff Current
Symbol
ICBO
IEBO
Conditions
VCB=(--)80V, IE=0
VEB=(--)4V, IC=0
min
0.4
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-220
Ratings
(--)120
(--)80
(--)6
(--)5
(--)9
1.75
30
150
--55 to +150
Unit
V
V
V
A
A
W
W
°C
°C
Ratings
typ
max
Unit
(--)0.1 mA
(--)0.1 mA
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
92502 TS IM 8-4532 No.1027-1/4


Sanyo Electric Components Datasheet

2SD1236 Datasheet

PNP / NPN Epitaxial Planar Silicon Transistors

No Preview Available !

2SB920 / 2SD1236
Continued from preceding page.
Parameter
DC Current Gain
Gain-Bandwidth Product
Collector-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
Conditions
hFE1*
hFE2
fT
VCE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
VCE=(--)2V, IC=(--)1A
VCE=(--)2V, IC=(--)3A
VCE=(--)5V, IC=(--)1A
IC=(--)3A, IB=(--)0.3A
IC=(--)1mA, IE=0
IC=(--)1mA, RBE=
IE=(--)1mA, IC=0
See specified test circuit.
See specified test circuit.
See specified test circuit.
*The 2SB920 / 2SD1236 are graded as follows by hFE at 1A :
Rank
Q
R
S
hFE 70 to 140 100 to 200 140 to 280
Swicthing Time Test Circuit
PW=20µs
D.C.1%
IB1
IB2
INPUT
RB=1
VR=10
50
+
100µF
VBE= --5V
IC=10IB1= --10IB2=2A
For PNP, the polarity is reversed.
OUTPUT
RL=25
+
470µF
VCC=50V
min
70*
30
(--)120
(--)80
(--)6
Ratings
typ
max
280*
20
(--0.5)0.4
(0.2)0.1
(0.7)1.2
(0.2)0.4
Unit
MHz
V
V
V
V
µs
µs
µs
--5.0
2SB920
--4.5 From top
--200mA
--4.0 --180mA
--3.5 --160mA
--140mA
--3.0 --120mA
--2.5
--2.0
IC -- VCE
--1--0800mmAA
--60mA
--40mA
--20mA
--1.5
--1.0
--0.5
0
0
IB=0
--0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0
Collector-to-Emitter Voltage, VCE -- V IT04407
IC -- VCE
--10
2SB920
--9
--8
--7
--6
-1-A900mA--80-0-7m0A0mA--600-m-5A00mA--4-0---032m000A0mmAA
--5 --100mA
--4
--3
--2
--1
0 IB=0
0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0
Collector-to-Emitter Voltage, VCE -- V IT04409
5.0
2SD1236
4.5
4.0
180mA
160mA
IC -- VCE
140mA120mA 1008m0mAA
60mA
3.5 40mA
3.0
2.5 20mA
2.0
1.5
1.0
0.5
0 IB=0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Collector-to-Emitter Voltage, VCE -- V IT04408
IC -- VCE
10
2SD1236
9 1A
900m80A0mA 700mA
600m5A00mA
8 400mA
7 300mA
6 200mA
5 100mA
4
3
2
1
0 IB=0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Collector-to-Emitter Voltage, VCE -- V IT04410
No.1027-2/4


Part Number 2SD1236
Description PNP / NPN Epitaxial Planar Silicon Transistors
Maker Sanyo Semicon Device
Total Page 4 Pages
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