Datasheet4U Logo Datasheet4U.com

2SD1236L - PNP/NPN Epitaxial Planar Silicon Transistors

Features

  • Low-saturation collector-to-emitter voltage : VCE(sat)=.
  • 0.5V (PNP), 0.4V (NPN) max.
  • High current capacity. Package Dimensions unit:mm 2010C [2SB920L/2SD1236L] ( ) : 2SB920L Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Symbol VCBO VCEO VEBO IC ICP PC Junction Temperature Storage Temperature Tj Tstg Electrica.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SD1236L NPN Transistor INCHANGE
2SD1236L SILICON POWER TRANSISTOR SavantIC
2SD1236 NPN Transistor INCHANGE
2SD1230 Silicon NPN Darlington Power Transistor INCHANGE
2SD1233 Power Transistor Inchange Semiconductor

Other Datasheets by SANYO (now Panasonic)

Part Number Description
2SD1236 PNP / NPN Epitaxial Planar Silicon Transistors
2SD1230 PNP/NPN Epitaxial Planar Silicon Transistors
2SD1235 PNP/NPN Epitaxial Planar Silicon Transistors
2SD1237L PNP/NPN Epitaxial Planar Silicon Transistors
2SD1238L PNP/NPN Epitaxial Planar Silicon Transistors

Full PDF Text Transcription

Click to expand full text
Ordering number:1796B PNP/NPN Epitaxial Planar Silicon Transistors 2SB920L/2SD1236L 80V/5A Switching Applications Applications · Relay drivers, high-speed inverters, converters, and other general high-current switching applications. Features · Low-saturation collector-to-emitter voltage : VCE(sat)=–0.5V (PNP), 0.4V (NPN) max. · High current capacity.
Published: |