2SD1236L
2SD1236L is PNP/NPN Epitaxial Planar Silicon Transistors manufactured by SANYO.
Features
- Low-saturation collector-to-emitter voltage : VCE(sat)=- 0.5V (PNP), 0.4V (NPN) max.
- High current capacity.
Package Dimensions unit:mm 2010C
[2SB920L/2SD1236L]
( ) : 2SB920L
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation
Symbol
VCBO VCEO VEBO
IC ICP PC
Junction Temperature Storage Temperature
Tj Tstg
Electrical Characteristics at Ta = 25˚C
Tc=25˚C
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current Emitter Cutoff Current DC Current Gain
Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage
ICBO IEBO h FE1 h FE2 f T VCE(sat)
VCB=(- )80V, IE=0 VEB=(- )4V, IC=0 VCE=(- )2V, IC=(- )1A VCE=(- )2V, IC=(- )3A VCE=(- )5V, IC=(- )1A IC=(- )3A, IB=(- )0.3A
- : The 2SB920L/2SD1236L are classified by 1A h FE as follows : 70 Q 140 100 R 200
JEDEC : TO-220AB 1 : Base
EIAJ : SC-46
2 : Collector
3 : Emitter
Ratings (- )90 (- )80 (- )6 (- )5 (- )9 1.75 30 150
- 55 to +150
Unit V V V A A W W ˚C ˚C
Ratings min typ
70- 30
20 max (- )0.1 (- )0.1 280-
0.4 (- 0.5)
Unit m A m A
MHz V V
140 S 280
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such...
