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Ordering number:EN1719B
NPN Epitaxial Planar Silicon Transistor
2SD1620
1.5V, 3V Strobe Applications
Features
· Less power dissipation because of low VCE(sat), permitting more flashes of light to be emitted.
· Large current capacity and highly resistant to breakdown.
· Excellent linearity of hFE in the region from low current to high current.
· Ultrasmall size supports high-density, ultrasmallsized hybrid IC designs.
Package Dimensions
unit:mm 2038A
[2SD1620]
4.5 1.6
1.5
1.0 2.5 4.25max
0.4 0.5
32 1.5
1
3.0
0.
2SD1620 Datasheet
