FEATURES
Less power dissipation because of low VCE(sat), permitting more flashes of light to be emitted. Large current capacity and highly resistant to breakdown. Excellent linearity of hFE in the region from low current to high current. Ultrasmall size supports high-density, ultrasmallsized hybrid IC designs. ABSOLUTE MAXIMUM RATINGS
Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Junction temperature Storage temperature * Mounted on ceramic board(250mm2×0.8mm) Symbol VCBO VCEO VEBO IC ICP PC PC * Tj Tstg Rating 30 25 6 3 5 500 1.3 150 -55 to +150 Unit V V V A A mW W ELECTRICAL CHARACTERISTICS
Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain Gain bandwidth product Output capacitance Collector-emitter saturation voltage Collector-base breakdown voltage Collector-emitter breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown vol...