Sanyo Electric 2SD1620
NPN Epitaxial Planar Silicon Transistor
APPLICATIONS
FEATURES
● Less power dissipation because of low VCE(sat), permitting more flashes of light to be emitted.● Large current capacity and highly resistant to breakdown.
● Excellent linearity of hFE in the region from low current to high current.
● Ultrasmall size supports high-density, ultrasmallsized hybrid IC designs. Package Dimensions unit:mm 2038A [2SD1620] 4.5 1.6 1.5 1.0 2.5 4.25max 0.4 0.5 32 1.5 1 3.0 0.75 Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Symbol VCBO VCEX VCEO VEBO IC ICP Collector Dissipation PC Junction Temperature Storage Temperature Tj TstgELECTRICAL CHARACTERISTICS
at Ta = 25˚C Conditions Mounted on ceramic board (250mm2× 0.8mm) Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Symbol Conditions ICBO IEBO...