Package Dimensions
unit : mm 2079D
[2SD2688LS]
10.0 3.2
3.5 7.2
High speed. High breakdown voltage(VCBO=1500V). High reliability(Adoption of HVP process). Adoption of MBIT process. On-chip damper diode. 4.5
2.8
16.1
16.0
3.6
0.9
1.2
14.0
1.2
0.75
0.7
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Co.
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Ordering number : ENN7526
2SD2688LS
NPN Triple Diffused Planar Silicon Transistor
2SD2688LS
Color TV Horizontal Deflection Output Applications
Features
• • • • •
Package Dimensions
unit : mm 2079D
[2SD2688LS]
10.0 3.2
3.5 7.2
High speed. High breakdown voltage(VCBO=1500V). High reliability(Adoption of HVP process). Adoption of MBIT process. On-chip damper diode.
4.5
2.8
16.1
16.0
3.6
0.9
1.2
14.0
1.2
0.75
0.7
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25°C Conditions
2.55
2.55
2.
2SD2688LS Datasheet
