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Ordering number:EN4316
P-Channel Silicon MOSFET
2SJ306
Ultrahigh-Speed Switching Applications
Features
· Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package facilitating mounting.
Package Dimensions
unit:mm 2063A
[2SJ306]
10.0 3.2
4.5 2.8
3.5 7.2 16.0
18.1 5.6
1.6 1.2
0.75 123 2.55 2.55
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse)
Symbol
VDSS VGSS
ID IDP
Allowable Power Dissipation
PD
Channel Temperature Storage Temperature
Tch Tstg
Conditions
PW≤10µs, duty cycle≤1% Tc=25˚C
2.55
2.55
2.4 14.0
2.4
0.7
1 : Gate 2 : Drain 3 : Source SANYO :TO-220ML
Ratings –250 ±30 –3 –12 2.
2SJ306 Datasheet
