2SJ635
Features
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General-Purpose Switching Device Applications
Low ON-resistance. Ultrahigh-speed switching. 4V drive. DC / DC Converter.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Tc=25°C Conditions Ratings --60 ±20 --12 --48 1 30 150 --55 to +150 Unit V V A A W W °C °C
Electrical Characteristics at Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss Conditions ID=--1m A, VGS=0V VDS=-60V, VGS=0V VGS=±16V, VDS=0V VDS=-10V, ID=--1m A VDS=-10V, ID=-6A ID=--6A, VGS=-10V...
