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Sanyo Electric Components Datasheet

2SK4177 Datasheet

N-Channel Silicon MOSFET

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Ordering number : ENA0869
2SK4177
SANYO Semiconductors
DATA SHEET
2SK4177
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
Low ON-resistance, low input capacitance, ultrahigh-speed switching.
Adoption of high reliability HVP process.
Avalanche resistance guarantee.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Avalanche Energy (Single Pulse) *1
Avalanche Current *2
*1 VDD=99V, L=20mH, IAV=2A
*2 L20mH, single pulse
Marking : K4177
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
EAS
IAV
Conditions
PW10μs, duty cycle1%
Tc=25°C
Ratings
1500
±20
2
4
1.65
80
150
--55 to +150
42
2
Unit
V
V
A
A
W
W
°C
°C
mJ
A
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
www.DataSheet4Uc.cuosmtomer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer's products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
31208QB TI IM TC-00001270 No. A0869-1/5


Sanyo Electric Components Datasheet

2SK4177 Datasheet

N-Channel Silicon MOSFET

No Preview Available !

2SK4177
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage
V(BR)DSS ID=1mA, VGS=0V
Zero-Gate Voltage Drain Current
IDSS
VDS=1200V, VGS=0V
Gate-to-Source Leakage Current
IGSS
VGS=±16V, VDS=0V
Cutoff Voltage
VGS(off) VDS=10V, ID=1mA
Forward Transfer Admittance
yfs
VDS=20V, ID=1A
Static Drain-to-Source On-State Resistance RDS(on) ID=1A, VGS=10V
Input Capacitance
Ciss
VDS=30V, f=1MHz
Output Capacitance
Coss
VDS=30V, f=1MHz
Reverse Transfer Capacitance
Crss
VDS=30V, f=1MHz
Turn-ON Delay Time
td(on)
See specified Test Circuit.
Rise Time
tr See specified Test Circuit.
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
Fall Time
tf See specified Test Circuit.
Total Gate Charge
Qg VDS=200V, VGS=10V, ID=2A
Gate-to-Source Charge
Qgs VDS=200V, VGS=10V, ID=2A
Gate-to-Drain “Miller” Charge
Qgd VDS=200V, VGS=10V, ID=2A
Diode Forward Voltage
VSD
IS=2A, VGS=0V
Note) Although the protection diode is contained between gate and source, be careful of handling enough.
min
1500
2.5
0.7
Ratings
typ
1.4
10
380
70
40
12
37
152
59
37.5
2.7
20
0.88
max
100
±10
3.5
13
1.2
Unit
V
μA
μA
V
S
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Package Dimensions
unit : mm (typ)
7513-002
Package Dimensions
unit : mm (typ)
7001-003
10.2 4.5
1.3
10.2 4.5
1.3
1.2
0.8
123
2.55 2.55
0.4
1 : Gate
2 : Drain
3 : Source
SANYO : SMP
12 3
0.8
1.2
2.55 2.55
2.55 2.55
0 to 0.3
0.4
1 : Gate
2 : Drain
3 : Source
SANYO : SMP-FD
Switching Time Test Circuit
VIN
10V
0V
VIN
PW=10μs
D.C.0.5%
www.DataSheet4U.com
G
VDD=200V
ID=1A
RL=200Ω
D VOUT
2SK4177
P.G RGB=50Ω S
Avalanche Resistance Test Circuit
50Ω
RG
10V
0V
50Ω
L
DUT
VDD
No. A0869-2/5


Part Number 2SK4177
Description N-Channel Silicon MOSFET
Maker Sanyo Semicon Device
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2SK4177 Datasheet PDF






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