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5LP01N - P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications

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Features

  • Package Dimensions unit : mm 2178 [5LP01N] 5.0 4.0 4.0 Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. 0.45 0.5 0.6 2.0 0.45 0.44 14.0 1 2 3 5.0 1 : Source 2 : Drain 3 : Gate 1.3 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle.

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Datasheet Details

Part number 5LP01N
Manufacturer Sanyo Semicon Device
File Size 161.30 KB
Description P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications
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www.DataSheet4U.com Ordering number : ENN6620 5LP01N P-Channel Silicon MOSFET 5LP01N Ultrahigh-Speed Switching Applications Features • • • Package Dimensions unit : mm 2178 [5LP01N] 5.0 4.0 4.0 Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. 0.45 0.5 0.6 2.0 0.45 0.44 14.0 1 2 3 5.0 1 : Source 2 : Drain 3 : Gate 1.3 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% 1.3 SANYO : NP Conditions Ratings -50 ±10 --0.07 --0.28 0.
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